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Register a new userCharaterization of the first prototype IHEP-NDL LGAD sensor
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The timing measurement of charged particles using silicon detector is widely used in synchrotron source as X-ray detectors, in time-of-flight mass spectrometer and especially in large collider experiment. To reduce the drastically event pile-up of high-luminosity large hadron collider (HL-LHC), a new concept of 4-dimension detector including timing and positon has been proposed. One of the candidates for the 4-dimension detector is a new kind of silicon detector called Low Gain Avalanche Diode (LGAD). In China, Institute of High Energy Physics (IHEP) Chinese Academic Science cooperated with Novel Device Laboratory (NDL) at Beijing Normal University have fabricated a series of LGAD sensors. The characterization of the first prototype of IHEP-NDL sensors is presented including leakage current and sensor capacitance measurement. A test system for the time resolution of jitter term using pico-second laser and fast sampling rate oscilloscope is also setup, and the time resolution of 10 ps can be achieved with these sensors.
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The performances of Low Gain Avalanche diode (LGAD) sensors from a neutron irradiation campaign with fluences of 0.8 x 10^15, 15 x 10^15 and 2.5 x 10^15 neq/cm2 are reported in this article. These LGAD sensors are developed by the Institute of High Energy Physics, Chinese Academy of Sciences and the Novel Device Laboratory for the High Granularity Timing Detector of the High Luminosity Large Hadron Collider. The timing resolution and collected charge of the LGAD sensors were measured with electrons from a beta source. After irradiation with a fluence of 2.5 x 10^15 neq/cm2, the collected charge decreases from 40 fC to 7 fC, the signal-to-noise ratio deteriorates from 48 to 12, and the timing resolution increases from 29 ps to 39 ps.
To meet the timing resolution requirement of up-coming High Luminosity LHC (HL-LHC), a new detector based on the Low-Gain Avalanche Detector(LGAD), High-Granularity Timing Detector (HGTD), is under intensive research in ATLAS. Two types of IHEP-NDL LGADs(BV60 and BV170) for this update is being developed by Institute of High Energy Physics (IHEP) of Chinese Academic of Sciences (CAS) cooperated with Novel Device Laboratory (NDL) of Beijing Normal University and they are now under detailed study. These detectors are tested with $5GeV$ electron beam at DESY. A SiPM detector is chosen as a reference detector to get the timing resolution of LGADs. The fluctuation of time difference between LGAD and SiPM is extracted by fitting with a Gaussian function. Constant fraction discriminator (CFD) method is used to mitigate the effect of time walk. The timing resolution of $41 pm 1 ps$ and $63 pm 1 ps$ are obtained for BV60 and BV170 respectively.
We study the radiation effects of the Low Gain Avalanche Detector (LGAD) sensors developed by the Institute of High Energy Physics (IHEP) and the Novel Device Laboratory (NDL) of Beijing Normal University in China. These new sensors have been irradiated at the China Institute of Atomic Energy (CIAE) using 100 MeV proton beam with five different fluences from 7$times10^{14}$ $n_{eq}/cm^2$ up to 4.5$times10^{15}$ $n_{eq}/cm^2$. The result shows the effective doping concentration in the gain layer decreases with the increase of irradiation fluence, as expected by the acceptor removal mechanism. By comparing data and model gives the acceptor removal coefficient $c_{A}$ = $(6.07pm0.70)times10^{-16}~cm^2$, which indicates the NDL sensor has fairly good radiation resistance.
Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow precision Higgs measurements. It is critical to achieve low power consumption to minimize the material budget. This requires careful optimization of the sensor diode geometry to reach high charge-over-capacitance that allows reduction in analog power consumption. Methods: The electrode area and footprint are two critical elements in sensor diode geometry and have deciding impacts on the sensor charge collection performance. Prototype CMOS pixel sensor JadePix-1 has been developed with pixel sectors implementing different electrode area and footprint and their charge collection performance has been characterized with radioactive resources. Results: Charge-to-voltage conversion gains are calibrated with low energy X-ray. Noise, charge collection efficiency, charge-over-capacitance and signal-to-noise ratio are obtained for pixel sectors of different electrode area and footprint. Conclusion: Small electrode area and large footprint are preferred to achieve high charge-over-capacitance that promises low analog power consumption. Ongoing studies on sensor performance before and after irradiation, combined with this work, will conclude on the diode geometry optimization.
We report on the results of a radiation campaign with neutrons and protons of Low Gain Avalanche Detectors (LGAD) produced by Hamamatsu (HPK) as prototypes for the High-Granularity Timing Detector (HGTD) in ATLAS. Sensors with an active thickness of 50~$mu$m were irradiated in steps of roughly 2$times$ up to a fluence of $3times10^{15}~mathrm{n_{eq}cm^{-2}}$. As a function of the fluence, the collected charge and time resolution of the irradiated sensors will be reported for operation at $-30^{circ}$.
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