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Register a new userCharacterization of the first prototype CMOS pixel sensor developed for the CEPC vertex detector
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Purpose: CMOS pixel sensors have become extremely attractive for future high performance tracking devices. Initial R&D work has been conducted for the vertex detector for the proposed Circular Electron Positron Collider that will allow precision Higgs measurements. It is critical to achieve low power consumption to minimize the material budget. This requires careful optimization of the sensor diode geometry to reach high charge-over-capacitance that allows reduction in analog power consumption. Methods: The electrode area and footprint are two critical elements in sensor diode geometry and have deciding impacts on the sensor charge collection performance. Prototype CMOS pixel sensor JadePix-1 has been developed with pixel sectors implementing different electrode area and footprint and their charge collection performance has been characterized with radioactive resources. Results: Charge-to-voltage conversion gains are calibrated with low energy X-ray. Noise, charge collection efficiency, charge-over-capacitance and signal-to-noise ratio are obtained for pixel sectors of different electrode area and footprint. Conclusion: Small electrode area and large footprint are preferred to achieve high charge-over-capacitance that promises low analog power consumption. Ongoing studies on sensor performance before and after irradiation, combined with this work, will conclude on the diode geometry optimization.
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The proposed Circular Electron Positron Collider (CEPC) imposes new challenges for the vertex detector in terms of high resolution, low material, fast readout and low power. The Monolithic Active Pixel Sensor (MAPS) technology has been chosen as one of the most promising candidates to satisfy these requirements. A MAPS prototype, called TaichuPix1, based on a data-driven structure, together with a column drain readout architecture, benefiting from the ALPIDE and FE-I3 approaches, has been implemented to achieve fast readout. This paper presents the overall architecture of TaichuPix1, the experimental characterization of the FE-I3-like matrix, the threshold dispersion, the noise distribution of the pixels and verifies the charge collection using a radioactive source. These results prove the functionality of the digital periphery and serializer are able to transmit the collected charge to the data interface correctly. Moreover, the individual self-tests of the serializer verify it can work up to about 3 Gbps. And it also indicates that the analog front-end features a fast-rising signal with a short time walk and that the FE-I3-like in-pixel digital logic is properly operating at the 40 MHz system clock.
CMOS Pixel Sensors are making steady progress towards the specifications of the ILD vertex detector. Recent developments are summarised, which show that these devices are close to comply with all major requirements, in particular the read-out speed needed to cope with the beam related background. This achievement is grounded on the double- sided ladder concept, which allows combining signals generated by a single particle in two different sensors, one devoted to spatial resolution and the other to time stamp, both assembled on the same mechanical support. The status of the development is overviewed as well as the plans to finalise it using an advanced CMOS process.
The use of CMOS Pixel Sensors (CPS) for high resolution and low material vertex detectors has been validated with the 2014 and 2015 physics runs of the STAR-PXL detector at RHIC/BNL. This opens the door to the use of CPS for inner tracking devices, with 10-100 times larger sensitive area, which require therefore a sensor design privileging power saving, response uniformity and robustness. The 350 nm CMOS technology used for the STAR-PXL sensors was considered as too poorly suited to upcoming applications like the upgraded ALICE Inner Tracking System (ITS), which requires sensors with one order of magnitude improvement on readout speed and improved radiation tolerance. This triggered the exploration of a deeper sub-micron CMOS technology, Tower-Jazz 180 nm, for the design of a CPS well adapted for the new ALICE-ITS running conditions. This paper reports the R&D results for the conception of a CPS well adapted for the ALICE-ITS.
A prototype of a Si-W EM calorimeter was built with Monolithic Active Pixel Sensors as the active elements. With a pixelsize of 30 $mu$m it allows digital calorimetry, i.e. the particles energy is determined by counting pixels, not by measuring the energy deposited. Although of modest size, with a width of only four Moliere radii, it has 39 million pixels. We describe the construction and tuning of the prototype and present results from beam tests and compare them with predictions of GEANT-based Monte Carlo simulations. We show the shape of showers caused by electrons in unprecedented detail. Results for energy and position resolution will also be given.
Active pixel sensors based on the High-Voltage CMOS technology are being investigated as a viable option for the future pixel tracker of the ATLAS experiment at the High-Luminosity LHC. This paper reports on the testbeam measurements performed at the H8 beamline of the CERN Super Proton Synchrotron on a High-Voltage CMOS sensor prototype produced in 180 nm AMS technology. Results in terms of tracking efficiency and timing performance, for different threshold and bias conditions, are shown.
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