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Register a new userChiral Hall effect in the kink states in topological insulators with magnetic domain walls
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In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.
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The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ u=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $rho_{yx} = pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall.
An intriguing observation on the quantum anomalous Hall effect (QAHE) in magnetic topological insulators (MTIs) is the dissipative edge states, where quantized Hall resistance is accompanied by nonzero longitudinal resistance. We numerically investigate this dissipative behavior of QAHE in MTIs with a three-dimensional tight-binding model and non-equilibrium Greens function formalism. It is found that, in clean samples, the geometric mismatch between the detecting electrodes and the MTI sample leads to additional scattering in the central Hall bar, which is similar to the effect of splitting gates in the traditional Hall effect. As a result, while the Hall resistance remains quantized, the longitudinal resistance deviates from zero due to such additional scattering. It is also shown that external magnetic fields as well as disorder scattering can suppress the dissipation of the longitudinal resistance. These results are in good agreement with previous experimental observations and provide insight on the fabrication of QAHE devices.
Recent magnetoconductance measurements performed on magnetic topological insulator candidates have revealed butterfly-shaped hysteresis. This hysteresis has been attributed to the formation of gapless chiral domain-wall bound states during a magnetic field sweep. We treat this phenomenon theoretically, providing a link between microscopic magnetization dynamics and butterfly hysteresis in magnetoconductance. Further, we illustrate how a spatially resolved conductance measurement can probe the most striking feature of the domain-wall bound states: their chirality. This work establishes a regime where a definitive link between butterfly hysteresis in longitudinal magneto-conductance and domain-wall bound states can be made. This analysis provides an important tool for the identification of magnetic topological insulators.
The Hall effect, the anomalous Hall effect and the spin Hall effect are fundamental transport processes in solids arising from the Lorentz force and the spin-orbit coupling respectively. The quant
We report a proximity-driven large anomalous Hall effect in all-telluride heterostructures consisting of ferromagnetic insulator Cr2Ge2Te6 and topological insulator (Bi,Sb)2Te3. Despite small magnetization in the (Bi,Sb)2Te3 layer, the anomalous Hall conductivity reaches a large value of 0.2e2/h in accord with a ferromagnetic response of the Cr2Ge2Te6. The results show that the exchange coupling between the surface state of the topological insulator and the proximitized Cr2Ge2Te6 layer is effective and strong enough to open the sizable exchange gap in the surface state.
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