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Register a new userChiral transport along magnetic domain walls in the quantum anomalous Hall effect
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The recent prediction, and subsequent discovery, of the quantum anomalous Hall (QAH) effect in thin films of the three-dimensional ferromagnetic topological insulator (MTI) (Cr$_y$Bi$_x$Sb$_{1-x-y}$)$_2$Te$_3$ has opened new possibilities for chiral-edge-state-based devices in zero external magnetic field. Like the $ u=1$ quantum Hall system, the QAH system is predicted to have a single chiral edge mode circulating along the boundary of the film. Backscattering of the chiral edge mode should be suppressed, as recently verified by the observation of well-quantized Hall resistivities $rho_{yx} = pm h/e^2$, along with longitudinal resistivities as low as a few ohms. Dissipationless 1D conduction is also expected along magnetic domain walls. Here, we intentionally create a magnetic domain wall in a MTI and study electrical transport along the domain wall. We present the first observation of chiral transport along domain walls, in agreement with theoretical predictions. We present further evidence that two modes equilibrate and co-propagate along the length of the domain wall.
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In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.
Domain walls, topological defects that define the frontier between regions of different stacking in multilayer graphene, have proved to host exciting physics. The ability of tuning these topological defects in-situ in an electronic transport experiment brings a wealth of possibilities in terms of fundamental understanding of domain walls as well as for electronic applications. Here, we demonstrate through a MEMS (micro-electromechanical system) actuator and magnetoresistance measurements the effect of domain walls in multilayer graphene quantum Hall effect. Reversible and controlled uniaxial strain triggers these topological defects, manifested as new quantum Hall effect plateaus as well as a discrete and reversible modulation of the current across the device. Our findings are supported by theoretical calculations and constitute the first indication of the in-situ tuning of topological defects in multilayer graphene probed through electronic transport, opening the way to the use of reversible topological defects in electronic applications.
The time it takes to accelerate an object from zero to a given velocity depends on the applied force and the environment. If the force ceases, it takes exactly the same time to completely decelerate. A magnetic domain wall (DW) is a topological object that has been observed to follow this behavior. Here we show that acceleration and deceleration times of chiral Neel walls driven by current are different in a system with low damping and moderate Dzyaloshinskii-Moriya (DM) exchange constant. The time needed to accelerate a DW with current via the spin Hall torque is much faster than the time it needs to decelerate once the current is turned off. The deceleration time is defined by the DM exchange constant whereas the acceleration time depends on the spin Hall torque, enabling tunable inertia of chiral DWs. Such unique feature of chiral DWs can be utilized to move and position DWs with lower current, key to the development of storage class memory devices.
The quantum anomalous Hall (QAH) state is a two-dimensional bulk insulator with a non-zero Chern number in absence of external magnetic fields. Protected gapless chiral edge states enable dissipationless current transport in electronic devices. Doping topological insulators with random magnetic impurities could realize the QAH state, but magnetic order is difficult to establish experimentally in the bulk insulating limit. Here we predict that the single quintuple layer of GdBiTe3 film could be a stoichiometric QAH insulator based on ab-initio calculations, which explicitly demonstrate ferromagnetic order and chiral edge states inside the bulk gap. We further investigate the topological quantum phase transition by tuning the lattice constant and interactions. A simple low-energy effective model is presented to capture the salient physical feature of this topological material.
The motion of magnetic domain walls in ultrathin magnetic heterostructures driven by current via the spin Hall torque is described. We show results from perpendicularly magnetized CoFeB|MgO heterostructures with various heavy metal underlayers. The domain wall moves along or against the current flow depending on the underlayer material. The direction to which the domain wall moves is associated with the chirality of the domain wall spiral formed in these heterostructures. The one-dimensional model is used to describe the experimental results and extract parameters such as the Dzyaloshinskii-Moriya exchange constant which is responsible for the formation of the domain wall spiral. Fascinating effects arising from the control of interfaces in magnetic heterostructures are described.
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