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Register a new userMagnetoconductance signatures of chiral domain-wall bound states in magnetic topological insulators
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Recent magnetoconductance measurements performed on magnetic topological insulator candidates have revealed butterfly-shaped hysteresis. This hysteresis has been attributed to the formation of gapless chiral domain-wall bound states during a magnetic field sweep. We treat this phenomenon theoretically, providing a link between microscopic magnetization dynamics and butterfly hysteresis in magnetoconductance. Further, we illustrate how a spatially resolved conductance measurement can probe the most striking feature of the domain-wall bound states: their chirality. This work establishes a regime where a definitive link between butterfly hysteresis in longitudinal magneto-conductance and domain-wall bound states can be made. This analysis provides an important tool for the identification of magnetic topological insulators.
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In this article we consider the chiral Hall effect due to topologically protected kink states formed in topological insulators at boundaries between domains with differing topological invariants. Such systems include the surfaces of three dimensional topological insulators magnetically doped or in proximity with ferromagnets, as well as certain two dimensional topological insulators. We analyze the equilibrium charge current along the domain wall and show that it is equal to the sum of counter-propagating equilibrium currents flowing along external boundaries of the domains. In addition, we also calculate a dissipative current along the domain wall when an external voltage is applied perpendicularly to the wall.
We present an exact solution of a modifed Dirac equation for topological insulator in the presence of a hole or vacancy to demonstrate that vacancies may induce bound states in the band gap of topological insulators. They arise due to the Z_2 classification of time-reversal invariant insulators, thus are also topologically-protected like the edge states in the quantum spin Hall effect and the surface states in three-dimensional topological insulators. Coexistence of the in-gap bound states and the edge or surface states in topological insulators suggests that imperfections may affect transport properties of topological insulators via additional bound states near the system boundary.
We consider a three-dimensional topological insulator (TI) wire with a non-uniform chemical potential induced by gating across the cross-section. This inhomogeneity in chemical potential lifts the degeneracy between two one-dimensional surface state subbands. A magnetic field applied along the wire, due to orbital effects, breaks time-reversal symmetry and lifts the Kramers degeneracy at zero-momentum. If placed in proximity to an $s$-wave superconductor, the system can be brought into a topological phase at relatively weak magnetic fields. Majorana bound states (MBSs), localized at the ends of the TI wire, emerge and are present for an exceptionally large region of parameter space in realistic systems. Unlike in previous proposals, these MBSs occur without the requirement of a vortex in the superconducting pairing potential, which represents a significant simplification for experiments. Our results open a pathway to the realisation of MBSs in present day TI wire devices.
A flat band in fermionic system is a dispersionless single-particle state with a diverging effective mass and nearly zero group velocity. These flat bands are expected to support exotic properties in the ground state, which might be important for a wide range of promising physical phenomena. For many applications it is highly desirable to have such states in Dirac materials, but so far they have been reported only in non-magnetic Dirac systems. In this work we propose a realization of topologically protected spin-polarized flat bands generated by domain walls in planar magnetic topological insulators. Using first-principles material design we suggest a family of intrinsic antiferromagnetic topological insulators with an in-plane sublattice magnetization and a high Neel temperature. Such systems can host domain walls in a natural manner. For these materials, we demonstrate the existence of spin-polarized flat bands in the vicinity of the Fermi level and discuss their properties and potential applications.
Eigenenergies of a non-Hermitian system without parity-time symmetry are complex in general. Here, we show that the chiral boundary states of non-Hermitian topological insulators without parity-time symmetry can be Hermitian with real eigenenergies under certain conditions. Our finding allows one to construct Hermitian chiral edge and hinge states from non-Hermitian two-dimensional Chern insulators and three-dimensional second-order topological insulators, respectively. Such Hermitian chiral boundary channels have perfect transmission coefficients (quantized values) and are robust against disorders. Furthermore, a non-Hermitian topological insulator can undergo the topological Anderson insulator transition from a topological trivial non-Hermitian metal or insulator to a topological Anderson insulator with quantized transmission coefficients at finite disorders.
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