No Arabic abstract
Ultrasound detection via silicon waveguides relies on the ability of acoustic waves to modulate the effective refractive index of the guided modes. However, the low photo-elastic response of silicon and silica limits the sensitivity of conventional silicon-on-insulator (SOI) sensors, in which the silicon core is surrounded by a silica cladding. In this paper, we demonstrate that the sensitivity of silicon waveguides to ultrasound may be significantly enhanced by replacing the silica over-cladding with bisbenzocyclobutene (BCB) - a transparent polymer with a high photo-elastic coefficient. In our experimental study, the response to ultrasound, in terms of the induced modulation in the effective refractive index, achieved for a BCB-coated silicon waveguide with TM polarization was comparable to values previously reported for polymer waveguides and an order of magnitude higher than the response achieved by an optical fiber. In addition, in our study the susceptibility of the sensors to surface acoustic waves and reverberations was reduced for both TE and TM modes when the BCB over-cladding was used.
Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.
On-chip optical interconnect has been widely accepted as a promising technology to realize future large-scale multiprocessors. Mode-division multiplexing (MDM) provides a new degree of freedom for optical interconnects to dramatically increase the link capacity. Present on-chip multimode devices are based on traditional wave-optics. Although large amount of computation and optimization are adopted to support more modes, mode-independent manipulation is still hard to be achieved due to severe mode dispersion. Here, we propose a universal solution to standardize the design of fundamental multimode building blocks, by introducing a geometrical-optics-like concept adopting waveguide width larger than the working wavelength. The proposed solution can tackle a group of modes at the same time with very simple processes, avoiding demultiplexing procedure and ensuring compact footprint. Compare to conventional schemes, it is scalable to larger mode channels without increasing the complexity and whole footprint. As a proof of concept, we demonstrate a set of multimode building blocks including crossing, bend, coupler and switches. Low losses of multimode waveguide crossing and bend are achieved, as well as ultra-low power consumption of the multimode switch is realized since it enables reconfigurable routing for a group of modes simultaneously. Our work promotes the multimode photonics research and makes the MDM technique more practical.
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V
Over the past decade, remarkable advances have been realized in chip-based nonlinear photonic devices for classical and quantum applications in the near- and mid-infrared regimes. However, few demonstrations have been realized in the visible and near-visible regimes, primarily due to the large normal material group-velocity dispersion (GVD) that makes it challenging to phase match third-order parametric processes. In this paper, we show that exploiting dispersion engineering of higher-order waveguide modes provides waveguide dispersion that allows for small or anomalous GVD in the visible and near-visible regimes and phase matching of four-wave mixing processes. We illustrate the power of this concept by demonstrating in silicon nitride microresonators a near-visible modelocked Kerr frequency comb and a narrow-band photon-pair source compatible with Rb transitions. These realizations extend applications of nonlinear photonics towards the visible and near-visible regimes for applications in time and frequency metrology, spectral calibration, quantum information, and biomedical applications.