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Register a new userLoss and Coupling Tuning via Heterogeneous Integration of MoS2 Layers in Silicon Photonics
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Layered two-dimensional (2D) materials provide a wide range of unique properties as compared to their bulk counterpart, making them ideal for heterogeneous integration for on-chip interconnects. Hence, a detailed understanding of the loss and index change on Si integrated platform is a prerequisite for advances in opto-electronic devices impacting optical communication technology, signal processing, and possibly photonic-based computing. Here, we present an experimental guide to characterize transition metal dichalcogenides (TMDs), once monolithically integrated into the Silicon photonic platform at 1.55 um wavelength. We describe the passive tunable coupling effect of the resonator in terms of loss induced as a function of 2D material layer coverage length and thickness. Further, we demonstrate a TMD-ring based hybrid platform as a refractive index sensor where resonance shift has been mapped out as a function of flakes thickness which correlates well with our simulated data. These experimental findings on passive TMD-Si hybrid platform open up a new dimension by controlling the effective change in loss and index, which may lead to the potential application of 2D material based active on chip photonics.
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Atomically thin 2D materials provide a wide range of basic building blocks with unique properties, making them ideal for heterogeneous integration with a mature chip platform. An understanding the role of excitons in transition metal dichalcogenides in Silicon photonic platform is a prerequisite for advances in optical communication technology, signal processing, and possibly computing. Here we demonstrate passive tunable coupling by integrating few layers of MoTe2 on a micro-ring resonator. We find a TMD-to-rings circumference coverage length ratio to place the ring into critical coupling to be about 10% as determined from the variation of spectral resonance visibility and loss as a function of TMD coverage. Using this TMD ring heterostructure, we further demonstrate a semi-empirical method to determine the index of an unknown TMD material (nMoTe2 of 4.36+.011i) near for telecommunication-relevant wavelength.
Ultrasound detection via silicon waveguides relies on the ability of acoustic waves to modulate the effective refractive index of the guided modes. However, the low photo-elastic response of silicon and silica limits the sensitivity of conventional silicon-on-insulator (SOI) sensors, in which the silicon core is surrounded by a silica cladding. In this paper, we demonstrate that the sensitivity of silicon waveguides to ultrasound may be significantly enhanced by replacing the silica over-cladding with bisbenzocyclobutene (BCB) - a transparent polymer with a high photo-elastic coefficient. In our experimental study, the response to ultrasound, in terms of the induced modulation in the effective refractive index, achieved for a BCB-coated silicon waveguide with TM polarization was comparable to values previously reported for polymer waveguides and an order of magnitude higher than the response achieved by an optical fiber. In addition, in our study the susceptibility of the sensors to surface acoustic waves and reverberations was reduced for both TE and TM modes when the BCB over-cladding was used.
On-chip optical interconnect has been widely accepted as a promising technology to realize future large-scale multiprocessors. Mode-division multiplexing (MDM) provides a new degree of freedom for optical interconnects to dramatically increase the link capacity. Present on-chip multimode devices are based on traditional wave-optics. Although large amount of computation and optimization are adopted to support more modes, mode-independent manipulation is still hard to be achieved due to severe mode dispersion. Here, we propose a universal solution to standardize the design of fundamental multimode building blocks, by introducing a geometrical-optics-like concept adopting waveguide width larger than the working wavelength. The proposed solution can tackle a group of modes at the same time with very simple processes, avoiding demultiplexing procedure and ensuring compact footprint. Compare to conventional schemes, it is scalable to larger mode channels without increasing the complexity and whole footprint. As a proof of concept, we demonstrate a set of multimode building blocks including crossing, bend, coupler and switches. Low losses of multimode waveguide crossing and bend are achieved, as well as ultra-low power consumption of the multimode switch is realized since it enables reconfigurable routing for a group of modes simultaneously. Our work promotes the multimode photonics research and makes the MDM technique more practical.
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V
Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
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