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Register a new userMultimode silicon photonics using on-chip geometrical-optics
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On-chip optical interconnect has been widely accepted as a promising technology to realize future large-scale multiprocessors. Mode-division multiplexing (MDM) provides a new degree of freedom for optical interconnects to dramatically increase the link capacity. Present on-chip multimode devices are based on traditional wave-optics. Although large amount of computation and optimization are adopted to support more modes, mode-independent manipulation is still hard to be achieved due to severe mode dispersion. Here, we propose a universal solution to standardize the design of fundamental multimode building blocks, by introducing a geometrical-optics-like concept adopting waveguide width larger than the working wavelength. The proposed solution can tackle a group of modes at the same time with very simple processes, avoiding demultiplexing procedure and ensuring compact footprint. Compare to conventional schemes, it is scalable to larger mode channels without increasing the complexity and whole footprint. As a proof of concept, we demonstrate a set of multimode building blocks including crossing, bend, coupler and switches. Low losses of multimode waveguide crossing and bend are achieved, as well as ultra-low power consumption of the multimode switch is realized since it enables reconfigurable routing for a group of modes simultaneously. Our work promotes the multimode photonics research and makes the MDM technique more practical.
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Silicon nitride (SiN) waveguides with ultra-low optical loss enable integrated photonic applications including low noise, narrow linewidth lasers, chip-scale nonlinear photonics, and microwave photonics. Lasers are key components to SiN photonic integrated circuits (PICs), but are difficult to fully integrate with low-index SiN waveguides due to their large mismatch with the high-index III-V gain materials. The recent demonstration of multilayer heterogeneous integration provides a practical solution and enabled the first-generation of lasers fully integrated with SiN waveguides. However a laser with high device yield and high output power at telecommunication wavelengths, where photonics applications are clustered, is still missing, hindered by large mode transition loss, nonoptimized cavity design, and a complicated fabrication process. Here, we report high-performance lasers on SiN with tens of milliwatts output through the SiN waveguide and sub-kHz fundamental linewidth, addressing all of the aforementioned issues. We also show Hertz-level linewidth lasers are achievable with the developed integration techniques. These lasers, together with high-$Q$ SiN resonators, mark a milestone towards a fully-integrated low-noise silicon nitride photonics platform. This laser should find potential applications in LIDAR, microwave photonics and coherent optical communications.
Ultrasound detection via silicon waveguides relies on the ability of acoustic waves to modulate the effective refractive index of the guided modes. However, the low photo-elastic response of silicon and silica limits the sensitivity of conventional silicon-on-insulator (SOI) sensors, in which the silicon core is surrounded by a silica cladding. In this paper, we demonstrate that the sensitivity of silicon waveguides to ultrasound may be significantly enhanced by replacing the silica over-cladding with bisbenzocyclobutene (BCB) - a transparent polymer with a high photo-elastic coefficient. In our experimental study, the response to ultrasound, in terms of the induced modulation in the effective refractive index, achieved for a BCB-coated silicon waveguide with TM polarization was comparable to values previously reported for polymer waveguides and an order of magnitude higher than the response achieved by an optical fiber. In addition, in our study the susceptibility of the sensors to surface acoustic waves and reverberations was reduced for both TE and TM modes when the BCB over-cladding was used.
Second-harmonic generation (SHG) is a direct measure of the strength of second-order nonlinear optical effects, which also include frequency mixing and parametric oscillations. Natural and artificial materials with broken center-of-inversion symmetry in their unit cell display high SHG efficiency, however the silicon-foundry compatible group-IV semiconductors (Si, Ge) are centrosymmetric, thereby preventing full integration of second-order nonlinearity in silicon photonics platforms. Here we demonstrate strong SHG in Ge-rich quantum wells grown on Si wafers. The symmetry breaking is artificially realized with a pair of asymmetric coupled quantum wells (ACQW), in which three of the quantum-confined states are equidistant in energy, resulting in a double resonance for SHG. Laser spectroscopy experiments demonstrate a giant second-order nonlinearity at mid-infrared pump wavelengths between 9 and 12 microns. Leveraging on the strong intersubband dipoles, the nonlinear susceptibility almost reaches 10^5 pm/V
The measurement and stabilization of the carrier-envelope offset frequency $f_{textrm{CEO}}$ via self-referencing is paramount for optical frequency comb generation which has revolutionized precision frequency metrology, spectroscopy, and optical clocks. Over the past decade, the development of chip-scale platforms has enabled compact integrated waveguides for supercontinuum generation. However, there is a critical need for an on-chip self-referencing system that is adaptive to different pump wavelengths, requires low pulse energy, and does not require complicated processing. Here, we demonstrate efficient carrier-envelope offset frequency $f_{textrm{CEO}}$ stabilization of a modelocked laser with only 107 pJ of pulse energy via self-referencing in an integrated lithium niobate waveguide. We realize an $f$-$2f$ interferometer through second-harmonic generation and subsequent supercontinuum generation in a single dispersion-engineered waveguide with a stabilization performance equivalent to a conventional off-chip module. The $f_{textrm{CEO}}$ beatnote is measured over a pump wavelength range of 70 nm. We theoretically investigate our system using a single nonlinear envelope equation with contributions from both second- and third-order nonlinearities. Our modeling reveals rich ultrabroadband nonlinear dynamics and confirms that the initial second harmonic generation followed by supercontinuum generation with the remaining pump is responsible for the generation of a strong $f_{textrm{CEO}}$ signal as compared to a traditional $f$-$2f$ interferometer. Our technology provides a highly-simplified system that is robust, low cost, and adaptable for precision metrology for use outside a research laboratory.
The ability to generate complex optical photon states involving entanglement between multiple optical modes is not only critical to advancing our understanding of quantum mechanics but will play a key role in generating many applications in quantum technologies. These include quantum communications, computation, imaging, microscopy and many other novel technologies that are constantly being proposed. However, approaches to generating parallel multiple, customisable bi- and multi-entangled quantum bits (qubits) on a chip are still in the early stages of development. Here, we review recent developments in the realisation of integrated sources of photonic quantum states, focusing on approaches based on nonlinear optics that are compatible with contemporary optical fibre telecommunications and quantum memory infrastructures as well as with chip-scale semiconductor technology. These new and exciting platforms hold the promise of compact, low-cost, scalable and practical implementations of sources for the generation and manipulation of complex quantum optical states on a chip, which will play a major role in bringing quantum technologies out of the laboratory and into the real world.
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