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Room-temperature ferromagnetic insulating state in highly cation-ordered epitaxial oxide double perovskite

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 Added by Changhee Sohn
 Publication date 2018
  fields Physics
and research's language is English




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Ferromagnetic insulators (FMIs) are one of the most important components in developing dissipationless electronic and spintronic devices. However, since ferromagnetism generally accompanies metallicity, FMIs are innately rare to find in nature. Here, novel room-temperature FMI films are epitaxially synthesized by deliberate control of the ratio of two B-site cations in the double perovskite Sr2FeReO6. In contrast to the known ferromagnetic metallic phase in stoichiometric Sr2FeReO6, a FMI state with a high Curie temperature (Tc~400 K) and a large saturation magnetization (MS~1.8 {mu}B/f.u.) is found in highly cation-ordered Fe-rich phases. The stabilization of the FMI state is attributed to the formation of extra Fe3+-Fe3+ and Fe3+-Re6+ bonding states, which originate from the excess Fe. The emerging FMI state by controlling cations in the epitaxial oxide perovskites opens the door to developing novel oxide quantum materials & heterostructures.

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Magnetic insulators have been intensively studied for over 100 years, and they, in particular ferrites, are considered to be the cradle of magnetic exchange interactions in solids. Their wide range of applications include microwave devices and permanent magnets . They are also suitable for spintronic devices owing to their high resistivity, low magnetic damping, and spin-dependent tunneling probabilities. The Curie temperature is the crucial factor determining the temperature range in which any ferri/ferromagnetic system remains stable. However, the record Curie temperature has stood for over eight decades in insulators and oxides (943 K for spinel ferrite LiFe5O8). Here we show that a highly B-site ordered double-perovskite, Sr2(SrOs)O6 (Sr3OsO6), surpasses this long standing Curie temperature record by more than 100 K. We revealed this B-site ordering by atomic-resolution scanning transmission electron microscopy. The density functional theory (DFT) calculations suggest that the large spin-orbit coupling (SOC) of Os6+ 5d2 orbitals drives the system toward a Jeff = 3/2 ferromagnetic (FM) insulating state. Moreover, the Sr3OsO6 is the first epitaxially grown osmate, which means it is highly compatible with device fabrication processes and thus promising for spintronic applications.
Dedicated control of oxygen vacancies is an important route to functionalizing complex oxide films. It is well-known that tensile strain significantly lowers the oxygen vacancy formation energy, whereas compressive strain plays a minor role. Thus, atomically reconstruction by extracting oxygen from a compressive-strained film is challenging. Here we report an unexpected LaCoO2.5 phase with a zigzag-like oxygen vacancy ordering through annealing a compressive-strained LaCoO3 in vacuum. The synergetic tilt and distortion of CoO5 square pyramids with large La and Co shifts are quantified using scanning transmission electron microscopy. The large in-plane expansion of CoO5 square pyramids weaken the crystal-field splitting and facilitated the ordered high-spin state of Co2+, which produces an insulating ferromagnetic state with a Curie temperature of ~284 K and a saturation magnetization of ~0.25 {mu}B/Co. These results demonstrate that extracting targeted oxygen from a compressive-strained oxide provides an opportunity for creating unexpected crystal structures and novel functionalities.
Lead-free double perovskite halides are emerging optoelectronic materials that are alternatives to lead-based perovskite halides. Recently, single-crystalline double perovskite halides were synthesized, and their intriguing functional properties were demonstrated. Despite such pioneering works, lead-free double perovskite halides with better crystallinity are still in demand for applications to novel optoelectronic devices. Here, we realized highly crystalline Cs2AgBiBr6 single crystals with a well-defined atomic ordering on the microscopic scale. We avoided the formation of Ag vacancies and the subsequent secondary Cs3Bi2Br9 by manipulating the initial chemical environments in hydrothermal synthesis. The suppression of Ag vacancies allows us to reduce the trap density in the as-grown crystals and to enhance the carrier mobility further. Our design strategy is applicable for fabricating other lead-free halide materials with high crystallinity.
Insulating uniaxial room-temperature ferromagnets are a prerequisite for commonplace spin wave-based devices, the obstacle in contemporary ferromagnets being the coupling of ferromagnetism with large conductivity. We show that the uniaxial $A^{1+2x}$Ti$^{4+}$$_{1-x}$O$_3$ (ATO), $A=$Ni$^{2+}$,Co$^{2+}$ and $0.6<x leq 1$, thin films are electrically insulating ferromagnets already at room-temperature. The octahedra network of the ATO and ilmenite structures are similar yet different octahedra-filling proved to be a route to switch from the antiferromagnetic to ferromagnetic regime. Octahedra can continuously be filled up to $x=1$, or vacated $(-0.24<x<0)$ in the ATO structure. TiO-layers, which separate the ferromagnetic (Ni,Co)O-layers and intermediate the antiferromagnetic coupling between the ferromagnetic layers in the NiTiO$_3$ and CoTiO$_3$ ilmenites, can continuously be replaced by (Ni,Co)O-layers to convert the ATO-films to ferromagnetic insulator with abundant direct cation interactions.
We report an above-room-temperature ferromagnetic state realized in a proximitized Dirac semimetal, which is fabricated by growing typical Dirac semimetal Cd$_3$As$_2$ films on a ferromagnetic garnet with strong perpendicular magnetization. Observed anomalous Hall conductivity with substantially large Hall angles is found to be almost proportional to magnetization and opposite in sign to it. Theoretical calculations based on first-principles electronic structure also demonstrate that the Fermi-level dependent anomalous Hall conductivity reflects the Berry curvature originating in the split Weyl nodes. The present Dirac-semimetal/ferromagnetic-insulator heterostructure will provide a novel platform for exploring Weyl-node transport phenomena and spintronic functions lately proposed for topological semimetals.
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