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Register a new userStructural phase transition and electronic structure evolution in Ir1-xPtxTe2 studied by scanning tunneling microscopy
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The IrTe2 transition metal dichalcogenide undergoes a series of structural and electronic phase transitions when doped with Pt. The nature of each phase and the mechanism of the phase transitions have attracted much attention. In this paper, we report scanning tunneling microscopy and spectroscopy studies of Pt doped IrTe2 with varied Pt contents. In pure IrTe2, we find that the ground state has a 1/6 superstructure, and the electronic structure is inconsistent with Fermi surface nesting induced charge density wave order. Upon Pt doping, the crystal structure changes to a 1/5 superstructure and then to a quasi-periodic hexagonal phase. First principles calculations show that the superstructures and electronic structures are determined by the global chemical strain and local impurity states that can be tuned systematically by Pt doping.
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The oxygen dopants are essential in tuning electronic properties of Bi$_2$Sr$_2$Ca$_{n-1}$Cu$_n$O$_{2n+4+delta}$ superconductors. Here we apply the technique of scanning tunneling microscopy and spectroscopy to study the influence of oxygen dopants in an optimally doped Bi$_2$Sr$_{2-x}$La$_x$CuO$_{6+delta}$ and an overdoped Bi$_{2-y}$Pb$_y$Sr$_2$CuO$_{6+delta}$. In both samples, we find that interstitial oxygen atoms on the SrO layers dominate over the other two forms of oxygen dopants, oxygen vacancies on the SrO layers and interstitial oxygen atoms on the BiO layers. The hole doping is estimated from the oxygen concentration, as compared to the result extracted from the measured Fermi surface. The precise spatial location is employed to obtain a negative correlation between the oxygen dopants and the inhomogeneous pseudogap.
We apply high resolution scanning tunneling microscopy to study intrinsic defect states of bulk FeSe. Four types of intrinsic defects including the type I dumbbell, type II dumbbell, top-layer Se vacancy and inner-layer Se-site defect are extensively analyzed by scanning tunneling spectroscopy. From characterized depression and enhancement of density of states measured in a large energy range, the type I dumbbell and type II dumbbell are determined to be the Fe vacancy and Se$_mathrm{Fe}$ defect, respectively. The top-layer Se vacancy and possible inner-layer Se-site vacancy are also determined by spectroscopy analysis. The determination of defects are compared and largely confirmed in the annular dark-field scanning transmission electron microscopy measurement of the exfoliated FeSe. The detailed mapping of defect states in our experiment lays the foundation for a comparison with complex theoretical calculations in the future.
Recent scanning tunneling microscopy (STM) observation of U-shaped and V-shaped spectra (and their mixture) in superconducting Nd$_{1-x}$Sr$_x$NiO$_2$ thin films has been interpreted as presence of two distinct gap symmetries in this nickelate superconductor [Gu et al., Nat. Comm. 11, 6027 (2020)]. Here, using a two-band model of nickelates capturing dominant contributions from Ni-$3d_{x^2-y^2}$ and rare-earth (R)-$5d_{3z^2 - r^2}$ orbitals, we show that the experimental observation can be simply explained within a pairing scenario characterized by a conventional $d_{x^2-y^2}$-wave gap structure with lowest harmonic on the Ni-band and a $d_{x^2-y^2}$-wave gap with higher-harmonics on the R-band. We perform realistic simulations of STM spectra employing first-principles Wannier functions to properly account for the tunneling processes and obtain V, U, and mixed spectral line-shapes depending on the position of the STM tip within the unit cell. The V- and U-shaped spectra are contributed from Ni and R-bands, respectively, and Wannier functions, in essence, provide position-dependent weighing factors, determining the spectral line-shape at a given intra-unit cell position. We propose a phase-sensitive experiment to distinguish between the proposed $d$-wave gap structure and time-reversal symmetry breaking $d+is$ gap which yields very similar intra-unit cell spectra.
Hexagonal FeSe thin films were grown on SrTiO3 substrates and the temperature and thickness dependence of their electronic structures were studied. The hexagonal FeSe is found to be metallic and electron doped, whose Fermi surface consists of six elliptical electron pockets. With decreased temperature, parts of the bands shift downward to high binding energy while some bands shift upwards to EF. The shifts of these bands begin around 300 K and saturate at low temperature, indicating a magnetic phase transition temperature of about 300 K. With increased film thickness, the Fermi surface topology and band structure show no obvious change except some minor quantum size effect. Our paper reports the first electronic structure of hexagonal FeSe, and shows that the possible magnetic transition is driven by large scale electronic structure reconstruction.
We have investigated low-temperature crystal structure of BiCh2-based compounds LaO1-xFxBiSSe (x = 0, 0.01, 0.02, 0.03, and 0.5), in which anomalous two-fold-symmetric in-plane anisotropy of superconducting states has been observed for x = 0.5. From synchrotron X-ray diffraction experiments, a structural transition from tetragonal to monoclinic was observed for x = 0 and 0.01 at 340 and 240 K, respectively. For x = 0.03, a structural transition and broadening of the diffraction peak were not observed down to 100 K. These facts suggest that the structural transition could be suppressed by 3% F substitution in LaO1-xFxBiSSe. Furthermore, the crystal structure for x = 0.5 at 4 K was examined by low-temperature (laboratory) X-ray diffraction, which confirmed that the tetragonal structure is maintained at 4 K for x = 0.5. Our results suggest that the two-fold-symmetric in-plane anisotropy of superconducting states observed for LaO0.5F0.5BiSSe was not originated from structural symmetry lowering.
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