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Register a new userMagneto-transport properties of oriented Mn2CoAl films sputtered on thermally oxidized Si substrates
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Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.
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Perpendicularly magnetized films showing small saturation magnetization, $M_mathrm{s}$, are essential for spin-transfer-torque writing type magnetoresistive random access memories, STT-MRAMs. An intermetallic compound, {(Mn-Cr)AlGe} of the Cu$_2$Sb-type crystal structure was investigated, in this study, as a material showing the low $M_mathrm{s}$ ($sim 300$ kA/m) and high-perpendicular magnetic anisotropy, $K_mathrm{u}$. The layer thickness dependence of $K_mathrm{u}$ and effects of Mg-insertion layers at top and bottom (Mn-Cr)AlGe$|$MgO interfaces were studied in film samples fabricated onto thermally oxidized silicon substrates to realize high-$K_mathrm{u}$ in the thickness range of a few nanometer. Optimum Mg-insertion thicknesses were 1.4 and 3.0 nm for the bottom and the top interfaces, respectively, which were relatively thick compared to results in similar insertion effect investigations on magnetic tunnel junctions reported in previous studies. The cross-sectional transmission electron microscope images revealed that the Mg-insertion layers acted as barriers to interdiffusion of Al-atoms as well as oxidization from the MgO layers. The values of $K_mathrm{u}$ were about $7 times 10^5$ and $2 times 10^5$ J/m$^3$ at room temperature for 5 and 3 nm-thick (Mn-Cr)AlGe films, respectively, with the optimum Mg-insertion thicknesses. The $K_mathrm{u}$ at a few nanometer thicknesses is comparable or higher than those reported in perpendicularly magnetized CoFeB films which are conventionally used in MRAMs, while the $M_mathrm{s}$ value is one third or less smaller than those of the CoFeB films. The developed (Mn-Cr)AlGe films are promising from the viewpoint of not only the magnetic properties, but also the compatibility to the silicon process in the film fabrication.
We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.
Spin information carried by magnons is attractive for computing technology and the development of magnon-based computing circuits is of great interest. However, magnon transport in insulators has been challenging, different from the clear physical picture for spin transport in conductors. Here we investigate the lateral transport properties of thermally excited magnons in yttrium iron garnet (YIG), a model magnetic insulator. Polarity reversals of detected spins in non-local geometry devices have been experimentally observed and are strongly dependent on temperature, YIG film thickness, and injector-detector separation distance. A competing two-channel transport model for thermally excited magnons is proposed, which is qualitatively consistent with the spin signal behavior. In addition to the fundamental significance for thermal magnon transport, our work furthers the development of magnonics by creating an easily accessible magnon source with controllable transport
Electrochromic materials change color reversibly by applying an external DC voltage. One among the many emerging application of electro-chromics is the smart windows. The coloration efficiency, the optical colour modulation and the cyclability are the factors that bench mark the device. Tungsten oxide (WO3-x) is versatile material and reactive DC magnetron sputtering (with argon as sputter gas) technique is common for electro-chromics. In the present communication we have prepared tungsten oxide thin films by reactive DC magnetron sputtering technique (at room temperature 300 K) using Neon as the sputter gas. The thickness of the WO3 thin films are varied from 190 nm to 712 nm. These WO3 thin films are subjected for electrochemical measurements with three electrode electrochemical cell in presence of 1M HCl, 1M Li2SO4 aqueous electrolyte and we have prepared a solid state electrochromic device with nafion thin film. The highest coloration efficiency of the neon sputtered WO3 is observed as 187.9 cm2/C by lithium intercalation.
We studied the structural and magnetic properties of FeC~thin films deposited by co-sputtering of Fe and C targets in a direct current magnetron sputtering (dcMS) process at a substrate temperature (Ts) of 300, 523 and 773,K. The structure and morphology was measured using x-ray diffraction (XRD), x-ray absorption near edge spectroscopy (XANES) at Fe $L$ and C $K$-edges and atomic/magnetic force microscopy (AFM, MFM), respectively. An ultrathin (3,nm) $^{57}$FeC~layer, placed between relatively thick FeC~layers was used to estimate Fe self-diffusion taking place during growth at different Ts~using depth profiling measurements. Such $^{57}$FeC~layer was also used for $^{57}$Fe conversion electron M{o}ssbauer spectroscopy (CEMS) and nuclear resonance scattering (NRS) measurements, yielding the magnetic structure of this ultrathin layer. We found from XRD measurements that the structure formed at low Ts~(300,K) is analogous to Fe-based amorphous alloy and at high Ts~(773,K), pre-dominantly a tifc~phase has been formed. Interestingly, at an intermediate Ts~(523,K), a clear presence of tefc~(along with tifc~and Fe) can be seen from the NRS spectra. The microstructure obtained from AFM images was found to be in agreement with XRD results. MFM images also agrees well with NRS results as the presence of multi-magnetic components can be clearly seen in the sample grown at Ts~= 523,K. The information about the hybridization between Fe and C, obtained from Fe $L$ and C $K$-edges XANES also supports the results obtained from other measurements. In essence, from this work, experimental realization of tefc~has been demonstrated. It can be anticipated that by further fine-tuning the deposition conditions, even single phase tefc~phase can be realized which hitherto remains an experimental challenge.
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