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Register a new userHigh efficiency, hybrid electrochromic device on polycarbonate substrates with neon sputtered WO3-x thin films
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Added by
Khanapuram Uday Kumar
Publication date
2016
fields
Physics
and research's language is
English
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Electrochromic materials change color reversibly by applying an external DC voltage. One among the many emerging application of electro-chromics is the smart windows. The coloration efficiency, the optical colour modulation and the cyclability are the factors that bench mark the device. Tungsten oxide (WO3-x) is versatile material and reactive DC magnetron sputtering (with argon as sputter gas) technique is common for electro-chromics. In the present communication we have prepared tungsten oxide thin films by reactive DC magnetron sputtering technique (at room temperature 300 K) using Neon as the sputter gas. The thickness of the WO3 thin films are varied from 190 nm to 712 nm. These WO3 thin films are subjected for electrochemical measurements with three electrode electrochemical cell in presence of 1M HCl, 1M Li2SO4 aqueous electrolyte and we have prepared a solid state electrochromic device with nafion thin film. The highest coloration efficiency of the neon sputtered WO3 is observed as 187.9 cm2/C by lithium intercalation.
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Electrochromic devices, which dynamically change color under the applied potential, are widely studied because of its wide range of applications such as energy-efficient smart windows, rear view mirrors and display devices etc. In this study we are reporting four layer electrochromic device based on tungsten oxide as a electrochromic layer and nafion membrane as a ionic conducting layer. Nafion membranes are generally used in fuel cell applications because of its high ionic conductivity and high optical transparency which is suitable for electrochromic device to attain higher efficiencies. We have prepared an electrochromic device by sandwiching ITO coated glass and WO3 coated ITO thin film between nafion membrane. The overall structure of the device is Glass/ITO/WO3/Nafion/ITO/Glass. We deposited tungsten oxide thin films with different thickness on ITO coated glass substrate at room temperature by using reactive DC Magnetron sputtering and we studied the performance of the electrochromic device with the function of thickness. We have observed that electrochromic efficiency is increasing with increase in the tungsten oxide layer thickness. The efficiency of the device increased from 24.8 cm2/C to 184.3 cm2/C.
We investigated the magnetic anisotropy ratio of thin sputtered polycrystalline MgB2 films on MgO substrates. Using high magnetic field measurements, we estimated an anisotropy ratio of 1.35 for T=0 K with an upper critical field of 31.74 T in the parallel case and 23.5 T in the perpendicular case. Direct measurements of a magnetic-field sweep at 4.2 K show a linear behavior, confirmed by a linear fit for magnetic fields perpendicular to the film plane. Furthermore, we observed a change of up to 12% of the anisotropy ratio in dependence of the film thickness.
Spin gapless semiconductors are interesting novel class of materials by embracing both magnetism and semiconducting. Its potential application in future spintronics requires realization in thin film form. In this letter, we report a successful growth of spin gapless Mn2CoAl films on thermally oxidized Si substrates by magnetron sputtering deposition. The films deposited at 673K are well oriented to (001) direction and display a uniform-crystalline surface. Magnetotransport measurements on the oriented films reveal a semiconducting-like resistivity, small anomalous Hall conductivity and linear magnetoresistance (MR) representative of the transport signatures of spin gapless semiconductors. The magnetic properties of the films have also been investigated and compared to that of bulk Mn2CoAl, with small discrepancy induced by the composition deviation.
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow cooled film. Significantly larger defect concentration, including stacking faults, was observed in 50W as deposited films than the films deposited at a higher rf power of 200W. The film annealed at 800{deg}C and then slow cooled showed an unusual grain growth upto 180nm for a film thickness of ~240nm. These grains showed Kikuchi pattern.
TbMnO$_{3}$ films have been grown under compressive strain on (001)-oriented SrTiO$_{3}$ crystals. They have an orthorhombic structure and display the (001) orientation. With increasing thickness, the structure evolves from a more symmetric (tetragonal) to a less symmetric (bulk-like orthorhombic) structure, while keeping constant the in-plane compression thereby leaving the out-of-plane lattice spacing unchanged. The domain microstructure of the films is also revealed, showing an increasing number of orthorhombic domains as the thickness is decreased: we directly observe ferroelastic domains as narrow as 4nm. The high density of domain walls may explain the induced ferromagnetism observed in the films, while both the decreased anisotropy and the small size of the domains could account for the absence of a ferroelectric spin spiral phase.
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