No Arabic abstract
The Mott-Anderson transition in the disordered charge-transfer model displays several new features in comparison to what is found in the disordered single-band Hubbard model, as recently demonstrated by large-scale computational (statistical dynamical mean field theory) studies. Here we show that a much simpler typical medium theory approach (TMT-DMFT) to the same model is able to capture most qualitative and even quantitative aspects of the phase diagram, the emergence of an intermediate electronic Griffiths phase, and the critical behavior close to the metal-insulator transition. Conceptual and mathematical simplicity of the TMT-DMFT formulation thus makes it possible to gain useful new insight into the mechanism of the Mott-Anderson transition in these models.
We present a large N solution of a microscopic model describing the Mott-Anderson transition on a finite-coordination Bethe lattice. Our results demonstrate that strong spatial fluctuations, due to Anderson localization effects, dramatically modify the quantum critical behavior near disordered Mott transitions. The leading critical behavior of quasiparticle wavefunctions is shown to assume a universal form in the full range from weak to strong disorder, in contrast to disorder-driven non-Fermi liquid (electronic Griffiths phase) behavior, which is found only in the strongly correlated regime.
We study the effect of uncorrelated random disorder on the temperature dependence of the superfluid stiffness in the two-dimensional classical XY model. By means of a perturbative expansion in the disorder potential, equivalent to the T-matrix approximation, we provide an extension of the effective-medium-theory result able to describe the low-temperature stiffness, and its separate diamagnetic and paramagnetic contributions. These analytical results provide an excellent description of the Monte Carlo simulations for two prototype examples of uncorrelated disorder. Our findings offer an interesting perspective on the effects of quenched disorder on longitudinal phase fluctuations in two-dimensional superfluid systems.
The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2 interacting fermionic atoms in a disordered optical lattice. We find that the topological Anderson and Mott insulators in the noninteracting and clean limits can be adiabatically connected without gap closing in the phase diagram of our model. Lying between the two phases, we uncover a disordered correlated topological insulator, which is induced from a trivial band insulator by the combination of disorder and interaction, as the generalization of topological Anderson insulators to the many-body interacting regime. The phase diagram is determined by computing various topological properties and confirmed by unsupervised and automated machine learning. We develop an approach to provide a unified and clear description of topological phase transitions driven by interaction and disorder. The topological phases can be detected from disorder/interaction induced edge excitations and charge pumping in optical lattices.
We elucidate the mechanism by which a Mott insulator transforms into a non-Fermi liquid metal upon increasing disorder at half filling. By correlating maps of the local density of states, the local magnetization and the local bond conductivity, we find a collapse of the Mott gap toward a V-shape pseudogapped density of states that occurs concomitantly with the decrease of magnetism around the highly disordered sites but an increase of bond conductivity. These metallic regions percolate to form an emergent non-Fermi liquid phase with a conductivity that increases with temperature. Bond conductivity measured via local microwave impedance combined with charge and spin local spectroscopies are ideal tools to corroborate our predictions.
We investigate the effects of weak to moderate disorder on the T=0 Mott metal-insulator transition in two dimensions. Our model calculations demonstrate that the electronic states close to the Fermi energy become more spatially homogeneous in the critical region. Remarkably, the higher energy states show the opposite behavior: they display enhanced spatial inhomogeneity precisely in the close vicinity to the Mott transition. We suggest that such energy-resolved disorder screening is a generic property of disordered Mott systems.