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Register a new userConnecting Topological Anderson and Mott Insulators in Disordered Interacting Fermionic Systems
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The topological Anderson and Mott insulators are two phases that have so far been separately and widely explored beyond topological band insulators. Here we combine the two seemingly different topological phases into a system of spin-1/2 interacting fermionic atoms in a disordered optical lattice. We find that the topological Anderson and Mott insulators in the noninteracting and clean limits can be adiabatically connected without gap closing in the phase diagram of our model. Lying between the two phases, we uncover a disordered correlated topological insulator, which is induced from a trivial band insulator by the combination of disorder and interaction, as the generalization of topological Anderson insulators to the many-body interacting regime. The phase diagram is determined by computing various topological properties and confirmed by unsupervised and automated machine learning. We develop an approach to provide a unified and clear description of topological phase transitions driven by interaction and disorder. The topological phases can be detected from disorder/interaction induced edge excitations and charge pumping in optical lattices.
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Hyperuniform disordered photonic materials (HDPM) are spatially correlated dielectric structures with unconventional optical properties. They can be transparent to long-wavelength radiation while at the same time have isotropic band gaps in another frequency range. This phenomenon raises fundamental questions concerning photon transport through disordered media. While optical transparency is robust against recurrent multiple scattering, little is known about other transport regimes like diffusive multiple scattering or Anderson localization. Here we investigate band gaps, and we report Anderson localization in two-dimensional stealthy HDPM using numerical simulations of the density of states and optical transport statistics. To establish a unified view, we propose a transport phase diagram. Our results show that, depending only on the degree of correlation, a dielectric material can transition from localization behavior to a bandgap crossing an intermediate regime dominated by tunneling between weakly coupled states.
We study the surface of a three-dimensional spin chiral $mathrm{Z}_2$ topological insulator (class CII), demonstrating the possibility of its localization. This arises through an interplay of interaction and statistically-symmetric disorder, that confines the gapless fermionic degrees of freedom to a network of one-dimensional helical domain-walls that can be localized. We identify two distinct regimes of this gapless insulating phase, a `clogged regime wherein the network localization is induced by its junctions between otherwise metallic helical domain-walls, and a `fully localized regime of localized domain-walls. The experimental signatures of these regimes are also discussed.
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