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As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the metallic character that prevails in large and highly doped structures is lost and the use of quantum dots for charge sensing becomes complex. Here we have investigated the mechanism behind the detection of electron motion inside an electrically isolated double quantum dot that is capacitively coupled to a single electron transistor, both fabricated from highly phosphorous doped silicon wafers. Despite, the absence of a direct charge transfer between the detector and the double dot structure, an efficient detection is obtained. In particular, unusually large Coulomb peak shifts in gate voltage are observed. Results are explained in terms of charge rearrangement and the presence of inelastic cotunneling via states at the periphery of the single electron transistor dot.
Converting information into work has during the last decade gained renewed interest as it gives insight into the relation between information theory and thermodynamics. Here we theoretically investigate an implementation of Maxwells demon in a double
We develop a master equation approach to study the backaction of quantum point contact (QPC) on a double quantum dot (DQD) at zero bias voltage. We reveal why electrons can pass through the zero-bias DQD only when the bias voltage across the QPC exce
We report a thermally activated metastability in a GaAs double quantum dot exhibiting real-time charge switching in diamond shaped regions of the charge stability diagram. Accidental charge traps and sensor back action are excluded as the origin of t
Quantum dots are artificial atoms used for a multitude of purposes. Charge defects are commonly present and can significantly perturb the designed energy spectrum and purpose of the dots. Voltage controlled exchange energy in silicon double quantum d
We present measurements of resonant tunneling through discrete energy levels of a silicon double quantum dot formed in a thin silicon-on-insulator layer. In the absence of piezoelectric phonon coupling, spontaneous phonon emission with deformation-po