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We study the effect of the disorder on the metallic behavior of a two-dimensional electron system in silicon. The temperature dependence of conductivity $sigma (T)$ was measured for different values of substrate bias, which changes both potential scattering and the concentration of disorder-induced local magnetic moments. We find that the latter has a much more profound effect on $dsigma/dT$. In fact, the data suggest that in the limit of $Tto 0$ the metallic behavior, as characterized by $dsigma/dT < 0$, is suppressed by an arbitrarily small amount of spin flip scattering by local magnetic moments.
Magnetoconductance (MC) in a parallel magnetic field B has been measured in a two-dimensional electron system in Si, in the regime where the conductivity decreases as sigma (n_s,T,B=0)=sigma (n_s,T=0) + A(n_s)T^2 (n_s -- carrier density) to a non-zer
Experiments on a sufficiently disordered two-dimensional (2D) electron system in silicon reveal a new and unexpected kind of metallic behavior, where the conductivity decreases as sigma (n_s,T)=sigma (n_s,T=0)+A(n_s)T^2 (n_s-carrier density) to a non
The temperature dependence of conductivity $sigma (T)$ in the metallic phase of a two-dimensional electron system in silicon has been studied for different concentrations of local magnetic moments. The local moments have been induced by disorder, and
We investigate electronic correlation effects on edge states of quantum spin-Hall insulators within the Kane-Mele-Hubbard model by means of quantum Monte Carlo simulations. Given the U(1) spin symmetry and time-reversal invariance, the low-energy the
Magnetic state of exchanged biased CoO(20nm)/Co($d_F$) bilayer ($d_F$=5-20nm) was studied by means of polarized neutron reflectometry. By spacing of CoO/Co bilayer and Al$_2$O$_3$ substrate with Nb(20nm) layer we created waveguide structure which all