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We report the measurements of the $^{29}$Si Knight shift $^{29}K$ on the noncentrosymmetric heavy-fermion compound CePt$_{3}$Si in which antiferromagnetism (AFM) with $T_{rm N}=2.2$ K coexists with superconductivity (SC) with $T_{c}=0.75$ K. Its spin part $^{29}K_{rm s}$, which is deduced to be $K_{rm s}^{c}ge 0.11$ and 0.16% at respective magnetic fields $H=2.0061$ and 0.8671 T, does not decrease across the superconducting transition temperature $T_{c}$ for the field along the c-axis. The temperature dependence of nuclear spin-lattice relaxation of $^{195}$Pt below $T_{c}$ has been accounted for by a Cooper pairing model with a two-component order parameter composed of spin-singlet and spin-triplet pairing components. From this result, it is shown that the Knight-shift data are consistent with the occurrence of the two-component order parameter for CePt$_{3}$Si.
We report on novel antiferromagnetic (AFM) and superconducting (SC) properties of noncentrosymmetric CePt3Si through measurements of the 195Pt nuclear spin-lattice relaxation rate 1/T_1. In the normal state, the temperature (T) dependence of 1/T1 unr
We report 29Si-NMR study on a single crystal of the heavy-fermion superconductor CeIrSi3 without an inversion symmetry along the c-axis. The 29Si-Knight shift measurements under pressure have revealed that the spin susceptibility for the ab-plane dec
In this article, we report the temperature dependence of spin-lattice relaxation rates at two Pt sites and one Si site in CePt3Si with a non-centrosymmetric structure center. 1/T1 for both Pt sites between 2 K and 300 K and 1/T1 of Si above 3 K might
The Co Knight shift was measured in an aligned powder sample of Na_xCoO_2yH_2O, which shows superconductivity at T_c sim 4.6 K. The Knight-shift components parallel (K_c) and perpendicular to the c-axis (along the ab plane K_{ab}) were measured in bo
We report a study in which the effect of defects/impurities, growth process, off-stoichiometry, and presence of impurity phases on the superconducting properties of noncentrosymmetric CePt3Si is analysed by means of the temperature dependence of the