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We report the observation of large ($sim 40%$) laser-induced above-bandgap transparency in GaAs at room temperature. The induced transparency is present only during the pulse width of the driving midinfrard laser pulses and its spectral shape is consistent with a laser-induced blue shift of the band edge. Our simulations based on the dynamic Franz-Keldysh effect reproduce the salient features of the experimental results, demonstrating in particular that the amount of the band edge shift is approximately given by the ponderomtive potential.
We have performed a systematic magneto-optical Kerr spectroscopy study of GaMnAs with varying Mn densities as a function of temperature, magnetic field, and photon energy. Unlike previous studies, the magnetization easy axis was perpendicular to the
We report results of investigations of structural and transport properties of GaAs/Ga(1-x)In(x)As/GaAs quantum wells (QWs) having a 0.5-1.8 ML thick Mn layer, separated from the QW by a 3 nm thick spacer. The structure has hole mobility of about 2000
A pressure-induced phase transition, associated with an increase of the coordination number of In and Ta, is detected beyond 13 GPa in InTaO4 by combining synchrotron x-ray diffraction and Raman measurements in a diamond anvil cell with ab-initio cal
Using a magneto-optical pump-probe technique with micrometer spatial resolution we show that magnetization precession can be launched in individual magnetic domains imprinted in a Co$_{40}$Fe$_{40}$B$_{20}$ (CoFeB) layer by elastic coupling to ferroe
The large electronic polarization in III-V nitrides allow for novel physics not possible in other semiconductor families. In this work, interband Zener tunneling in wide-bandgap GaN heterojunctions is demonstrated by using polarization-induced electr