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The promise of quantum information technology hinges on the ability to control large numbers of qubits with high-fidelity. Quantum dots define a promising platform due to their compatibility with semiconductor manufacturing. Moreover, high-fidelity operations above 99.9% have been realized with individual qubits, though their performance has been limited to 98.67% when driving two qubits simultaneously. Here we present single-qubit randomized benchmarking in a two-dimensional array of spin qubits, for one, two and four simultaneously driven qubits. We find that by carefully tuning the qubit parameters, we achieve native gate fidelities of 99.9899(4)%, 99.904(4)% and 99.00(4)% respectively. We also find that cross talk with next-nearest neighbor pairs induces errors that can be imperceptible within the error margin, indicating that cross talk can be highly local. These characterizations of the single-qubit gate quality and the ability to operate simultaneously are crucial aspects for scaling up germanium based quantum information technology.
A major challenge in practical quantum computation is the ineludible errors caused by the interaction of quantum systems with their environment. Fault-tolerant schemes, in which logical qubits are encoded by several physical qubits, enable correct ou
We present efficient methods to reliably characterize and tune gate-defined semiconductor spin qubits. Our methods are designed to target the tuning procedures of semiconductor double quantum dot in GaAs heterostructures, but can easily be adapted to
Reliable qubits are difficult to engineer, but standard fault-tolerance schemes use seven or more physical qubits to encode each logical qubit, with still more qubits required for error correction. The large overhead makes it hard to experiment with
Fault-tolerant quantum operation is a key requirement for the development of quantum computing. This has been realized in various solid-state systems including isotopically purified silicon which provides a nuclear spin free environment for the qubit
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disord