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Semiconductor materials stacks for quantum dot spin qubits

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 نشر من قبل Giordano Scappucci
 تاريخ النشر 2021
  مجال البحث فيزياء
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In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disorder from electrical transport. This brief note is far from being exhaustive and should be considered a first introduction to the materials challenges and opportunities towards a larger spin qubit quantum processor.



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