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A Kinetic Monte Carlo model that simulates the growth of thin films under conditions typically encountered in plasma enhanced chemical vapor deposition experiments is presented. The model is intended to reproduce the growth of two different types of materials (amorphous nanocolumnar and anisotropic-polycrystalline) in a coarse-grained fashion. In order to show the advantages and limitations of the model, the microstructure, texture, and scaling properties of TiO2 and ZnO thin-film growth are obtained under several growth conditions and compared with available experimental data obtained by X-Ray Diffraction, analysis of texture coefficients, Atomic Force Microscopy and Scanning Electron Microscopy.
Nanographitic structures (NGSs) with multitude of morphological features are grown on SiO2/Si substrates by electron cyclotron resonance - plasma enhanced chemical vapor deposition (ECR-PECVD). CH4 is used as source gas with Ar and H2 as dilutants. F
Controlled anisotropic growth of two-dimensional materials provides an approach for the synthesis of large single crystals and nanoribbons, which are promising for applications as low-dimensional semiconductors and in next-generation optoelectronic d
Crystallization is a key for ferroelectricity which is a collective behavior of microscopic electric dipoles. On the other hand, uncontrolled crystallization leads to uneven morphology and random crystal orientations, which undermines the application
Uniform single layer graphene was grown on single-crystal Ir films a few nanometers thick which were prepared by pulsed laser deposition on sapphire wafers. These graphene layers have a single crystallographic orientation and a very low density of de
We demonstrate control of the carrier density of single phase anatase TiO2 thin films by nearly two orders of magnitude by modulating the growth kinetics during pulsed laser deposition, under fixed thermodynamic conditions. The resistivity and the in