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When a system is thermally coupled to only a small part of a larger bath, statistical fluctuations of the temperature (more precisely, the internal energy) of this sub-bath around the mean temperature defined by the larger bath can become significant. We show that these temperature fluctuations generally give rise to 1/f-like noise power spectral density from even a single two-level system. We extend these results to a distribution of fluctuators, finding the corresponding modification to the Dutta-Horn relation. Then we consider the specific situation of charge noise in silicon quantum dot qubits and show that recent experimental data [E. J. Connors, et al., Phys. Rev. B 100, 165305 (2019)] can be modeled as arising from as few as two two-level fluctuators, and accounting for sub-bath size improves the quality of the fit.
We investigate the influence of the electron-phonon interaction on the decay dynamics of a quantum dot coupled to an optical microcavity. We show that the electron-phonon interaction has important consequences on the dynamics, especially when the qua
In this perspective piece, I benchmark gallium arsenide, silicon, and germanium as material platforms for gate-defined quantum dot spin qubits. I focus on materials stacks, quantum dot architectures, bandstructure properties and qualifiers for disord
In recent years semiconducting qubits have undergone a remarkable evolution, making great strides in overcoming decoherence as well as in prospects for scalability, and have become one of the leading contenders for the development of large-scale quan
Semiconductor quantum-dot spin qubits are a promising platform for quantum computation, because they are scalable and possess long coherence times. In order to realize this full potential, however, high-fidelity information transfer mechanisms are re
The spin states of single electrons in gate-defined quantum dots satisfy crucial requirements for a practical quantum computer. These include extremely long coherence times, high-fidelity quantum operation, and the ability to shuttle electrons as a m