ترغب بنشر مسار تعليمي؟ اضغط هنا

Interaction of edge exciton polaritons with engineered defects in the van der Waals material Bi2Se3

74   0   0.0 ( 0 )
 نشر من قبل Nahid Talebi
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

Hyperbolic materials exhibit unique properties that enable a variety of intriguing applications in nanophotonics. The topological insulator Bi2Se3 represents a natural hyperbolic optical medium, both in the THz and visible range. Here, using cathodoluminescence spectroscopy and electron energy-loss spectroscopy, we demonstrate that Bi2Se3, in addition to being a hyperbolic material, supports room-temperature exciton polaritons. Moreover, we explore the behavior of hyperbolic edge exciton polaritons in Bi2Se3. Edge polaritons are hybrid modes that result from the coupling of the polaritons bound to the upper and lower edges of Bi2Se3 nanoplatelets. In particular, we use electron energy-loss spectroscopy to compare Fabry-Perot-like resonances emerging in edge polariton propagation along pristine and artificially structured edges of the nanoplatelets. The experimentally observed scattering of edge polaritons by defect structures was found to be in good agreement with finite-difference time-domain simulations. Moreover, we experimentally proved coupling of localized polaritons in identical open and closed circular nanocavities to the propagating edge polaritons. Our findings are testimony to the extraordinary capability of the hyperbolic polariton propagation to cope with the presence of defects. This provides an excellent basis for applications such as nanooptical circuitry, cloaking at the nanometer scale, as well as nanoscopic quantum technology on the nanoscale.


قيم البحث

اقرأ أيضاً

Raman scattering is a ubiquitous phenomenon in light-matter interactions which reveals a materials electronic, structural and thermal properties. Controlling this process would enable new ways of studying and manipulating fundamental material propert ies. Here, we report a novel Raman scattering process at the interface between different van der Waals (vdW) materials as well as between a monolayer semiconductor and 3D crystalline substrates. We find that interfacing a WSe2 monolayer with materials such as SiO2, sapphire, and hexagonal boron nitride (hBN) enables Raman transitions with phonons which are either traditionally inactive or weak. This Raman scattering can be amplified by nearly two orders of magnitude when a foreign phonon mode is resonantly coupled to the A exciton in WSe2 directly, or via an A1 optical phonon from WSe2. We further showed that the interfacial Raman scattering is distinct between hBN-encapsulated and hBN-sandwiched WSe2 sample geometries. This cross-platform electron-phonon coupling, as well as the sensitivity of 2D excitons to their phononic environments, will prove important in the understanding and engineering of optoelectronic devices based on vdW heterostructures.
Due to a strong Coulomb interaction, excitons dominate the excitation kinetics in 2D materials. While Coulomb-scattering between electrons has been well studied, the interaction of excitons is more challenging and remains to be explored. As neutral c omposite bosons consisting of electrons and holes, excitons show a non-trivial scattering dynamics. Here, we study on microscopic footing exciton-exciton interaction in transition-metal dichalcogenides and related van der Waals heterostructures. We demonstrate that the crucial criterion for efficient scattering is a large electron/hole mass asymmetry giving rise to internal charge inhomogeneities of excitons and emphasizing their cobosonic substructure. Furthermore, both exchange and direct exciton-exciton interactions are boosted by enhanced exciton Bohr radii. We also predict an unexpected temperature dependence that is usually associated to phonon-driven scattering and we reveal an orders of magnitude stronger interaction of interlayer excitons due to their permanent dipole moment. The developed approach can be generalized to arbitrary material systems and will help to study strongly correlated exciton systems, such as moire super lattices.
Van der Waals materials and heterostructures manifesting strongly bound room temperature exciton states exhibit emergent physical phenomena and are of a great promise for optoelectronic applications. Here, we demonstrate that nanostructured multilaye r transition metal dichalcogenides by themselves provide an ideal platform for excitation and control of excitonic modes, paving the way to exciton-photonics. Hence, we show that by patterning the TMDCs into nanoresonators, strong dispersion and avoided crossing of excitons and hybrid polaritons with interaction potentials exceeding 410 meV may be controlled with great precision. We further observe that inherently strong TMDC exciton absorption resonances may be completely suppressed due to excitation of hybrid photon states and their interference. Our work paves the way to a next generation of integrated exciton optoelectronic nano-devices and applications in light generation, computing, and sensing.
Layered materials can be assembled vertically to fabricate a new class of van der Waals (VDW) heterostructures a few atomic layers thick, compatible with a wide range of substrates and optoelectronic device geometries, enabling new strategies for con trol of light-matter coupling. Here, we incorporate molybdenum diselenide/boron nitride (MoSe$_2$/hBN) quantum wells (QWs) in a tunable optical microcavity. Part-light-part-matter polariton eigenstates are observed as a result of the strong coupling between MoSe$_2$ excitons and cavity photons, evidenced from a clear anticrossing between the neutral exciton and the cavity modes with a splitting of 20 meV for a single MoSe$_2$ monolayer QW, enhanced to 29 meV in MoSe$_2$/hBN/MoSe$_2$ double-QWs. The splitting at resonance provides an estimate of the exciton radiative lifetime of 0.4 ps. Our results pave the way for room temperature polaritonic devices based on multiple-QW VDW heterostructures, where polariton condensation and electrical polariton injection through the incorporation of graphene contacts may be realised.
In inhomogeneous dielectric media the divergence of the electromagnetic stress is related to the gradients of varepsilon and mu, which is a consequence of Maxwells equations. Investigating spherically symmetric media we show that this seemingly unive rsal relationship is violated for electromagnetic vacuum forces such as the generalized van der Waals and Casimir forces. The stress needs to acquire an additional anomalous pressure. The anomaly is a result of renormalization, the need to subtract infinities in the stress for getting a finite, physical force. The anomalous pressure appears in the stress in media like dark energy appears in the energy-momentum tensor in general relativity. We propose and analyse an experiment to probe the van der Waals anomaly with ultracold atoms. The experiment may not only test an unusual phenomenon of quantum forces, but also an analogue of dark energy, shedding light where nothing is known empirically.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا