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Novel categories of electronic devices and quantum materials are obtained by pipelining the unitary evolution of electron quantum states as described by Schroedingers equation with non-unitary processes that interrupt the coherent propagation of electrons. These devices and materials reside in the fascinating transition regime between quantum mechanics and classical physics. The devices are designed such that a nonreciprocal unitary state evolution is achieved by means of a broken inversion symmetry, for example as induced at material interfaces. This coherent state evolution is interrupted by individual inelastic scattering events caused by defects coupled to an environment. Two-terminal non-unitary quantum devices, for example, feature nonreciprocal conductance in linear response. Thus, they are exemptions to Onsagers reciprocal relation, and they challenge the second law of thermodynamics. Implementing the device function into the unit cells of materials or meta-materials yields novel functionalities in 2D and 3D materials, at interfaces, and in heterostructures.
Topological edge states exhibit dissipationless transport and electrically-driven topological phase transitions, making them ideal for next-generation transistors that are not constrained by Moores law. Nevertheless, their dispersion has never been p
We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter
Higher-order exchange interactions and quantum effects are widely known to play an important role in describing the properties of low-dimensional magnetic compounds. Here we identify the recently discovered two-dimensional (2D) van der Waals (vdW) Cr
The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which
We realize p-p-p junctions in few-layer black phosphorus (BP) devices, and use magneto-transport measurements to study the equilibration and transmission of edge states at the interfaces of regions with different charge densities. We observe both ful