ترغب بنشر مسار تعليمي؟ اضغط هنا

Spin-transfer pulse switching: From the dynamic to the thermally activated regime

113   0   0.0 ( 0 )
 نشر من قبل Andrew Kent
 تاريخ النشر 2010
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

The effect of thermal fluctuations on spin-transfer switching has been studied for a broad range of time scales (sub-ns to seconds) in a model system, a uniaxial thin film nanomagnet. The nanomagnet is incorporated into a spin-valve nanopillar, which is subject to spin-polarized current pulses of variable amplitude and duration. Two physical regimes are clearly distinguished: a long pulse duration regime, in which reversal occurs by spin-transfer assisted thermal activation over an energy barrier, and a short time large pulse amplitude regime, in which the switching probability is determined by the spin angular momentum in the current pulse.

قيم البحث

اقرأ أيضاً

We present switching field distributions of spin-transfer assisted magnetization reversal in perpendicularly magnetized Co/Ni multilayer spin-valve nanopillars at room temperature. Switching field measurements of the Co/Ni free layer of spin-valve na nopillars with a 50 nm x 300 nm ellipse cross section were conducted as a function of current. The validity of a model that assumes a spin-current dependent effective barrier for thermally activated reversal is tested by measuring switching field distributions under applied direct currents. We show that the switching field distributions deviate significantly from the double exponential shape predicted by the effective barrier model, beginning at applied currents as low as half of the zero field critical current. Barrier heights extracted from switching field distributions for currents below this threshold are a monotonic function of the current. However, the thermally-induced switching model breaks down for currents exceeding the critical threshold.
We study the lifetime of the persistent spin helix in semiconductor quantum wells with equal Rashba- and linear Dresselhaus spin-orbit interactions. In order to address the temperature dependence of the relevant spin relaxation mechanisms we derive a nd solve semiclassical spin diffusion equations taking into account spin-dependent impurity scattering, cubic Dresselhaus spin-orbit interactions and the effect of electron-electron interactions. For the experimentally relevant regime we find that the lifetime of the persistent spin helix is mainly determined by the interplay of cubic Dresselhaus spin-orbit interaction and electron-electron interactions. We propose that even longer lifetimes can be achieved by generating a spatially damped spin profile instead of the persistent spin helix state.
A practical problem for memory applications involving perpendicularly magnetized magnetic tunnel junctions is the reliability of switching characteristics at high-bias voltage. Often it has been observed that at high-bias, additional error processes are present that cause a decrease in switching probability upon further increase of bias voltage. We identify the main cause of such error-rise process through examination of switching statistics as a function of bias voltage and applied field, and the junction switching dynamics in real time. These experiments show a coincidental onset of error-rise and the presence of a new low-frequency microwave emission well below that dictated by the anisotropy field. We show that in a few-macrospin coupled numerical model, this is consistent with an interface region with concentrated perpendicular anisotropy, and where the magnetic moment has limited exchange coupling to the rest of the layers. These results point to the important role high-frequency interface magnetic moment dynamics play in determining the switching characteristics of these tunnel junction devices.
We study the role of thermal fluctuations on the spin dynamics of a thin permalloy film with a focus on the behavior of spin torque and find that the thermally assisted spin torque results in new aspects of the magnetization dynamics. In particular, we uncover the formation of a finite, spin torque-induced, in-plane magnetization component. The orientation of the in-plane magnetization vector depends on the temperature and the spin-torque coupling. We investigate and illustrate that the variation of the temperature leads to a thermally-induced rotation of the in-plane magnetization.
Novel categories of electronic devices and quantum materials are obtained by pipelining the unitary evolution of electron quantum states as described by Schroedingers equation with non-unitary processes that interrupt the coherent propagation of elec trons. These devices and materials reside in the fascinating transition regime between quantum mechanics and classical physics. The devices are designed such that a nonreciprocal unitary state evolution is achieved by means of a broken inversion symmetry, for example as induced at material interfaces. This coherent state evolution is interrupted by individual inelastic scattering events caused by defects coupled to an environment. Two-terminal non-unitary quantum devices, for example, feature nonreciprocal conductance in linear response. Thus, they are exemptions to Onsagers reciprocal relation, and they challenge the second law of thermodynamics. Implementing the device function into the unit cells of materials or meta-materials yields novel functionalities in 2D and 3D materials, at interfaces, and in heterostructures.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا