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تسجيل مستخدم جديدOptical manipulation of edge state transport in HgTe quantum wells in the quantum hall regime
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We investigate an effective low energy theory of HgTe quantum wells near their mass inversion thickness in a perpendicular magnetic field. By comparison of the effective band structure with a more elaborated and well-established model, the parameter regime and the validity of the effective model is scrutinized. Optical transitions in HgTe quantum wells are analyzed. We find selection rules which we functionalize to optically manipulate edge state transport. Qualitatively, our findings equally apply to optical edge current manipulation in graphene.
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Recent theory predicted that the Quantum Spin Hall Effect, a fundamentally novel quantum state of matter that exists at zero external magnetic field, may be realized in HgTe/(Hg,Cd)Te quantum wells. We have fabricated such sample structures with low
density and high mobility in which we can tune, through an external gate voltage, the carrier conduction from n-type to the p-type, passing through an insulating regime. For thin quantum wells with well width d < 6.3 nm, the insulating regime shows the conventional behavior of vanishingly small conductance at low temperature. However, for thicker quantum wells (d > 6.3 nm), the nominally insulating regime shows a plateau of residual conductance close to 2e^2/h. The residual conductance is independent of the sample width, indicating that it is caused by edge states. Furthermore, the residual conductance is destroyed by a small external magnetic field. The quantum phase transition at the critical thickness, d = 6.3 nm, is also independently determined from the magnetic field induced insulator to metal transition. These observations provide experimental evidence of the quantum spin Hall effect.
We propose a minimal effective two-dimensional Hamiltonian for HgTe/CdHgTe quantum wells (QWs) describing the side maxima of the first valence subband. By using the Hamiltonian, we explore the picture of helical edge states in tensile and compressive
ly strained HgTe QWs. We show that both dispersion and probability density of the edge states can differ significantly from those predicted by the Bernevig-Hughes-Zhang (BHZ) model. Our results pave the way towards further theoretical investigations of HgTe-based quantum spin Hall insulators with direct and indirect band gaps beyond the BHZ model.
The solutions for the helical edge states for an effective continuum model for the quantum spin Hall effect in HgTe/CdTe quantum wells are presented. For a sample of a large size, the solution gives the linear dispersion for the edge states. However,
in a finite strip geometry, the edge states at two sides will couple with each other, which leads to a finite energy gap in the spectra. The gap decays in an exponential law of the width of sample. The magnetic field dependence of the edge states illustrates the difference of the edge states from those of a conventional quantum Hall strip of two-dimensional electron gas.
We investigate the current noise in HgTe-based quantum wells with an inverted band structure in the regime of disordered edge transport. Consistent with previous experiments, the edge resistance strongly exceeds $h/e^2$ and weakly depends on the temp
erature. The shot noise is well below the Poissonian value and characterized by the Fano factor with gate voltage and sample to sample variations in the range $0.1<F<0.3$. Given the fact that our devices are shorter than the most pessimistic estimate of the ballistic dephasing length, these observations exclude the possibility of one-dimensional helical edge transport. Instead, we suggest that a disordered multi-mode conduction is responsible for the edge transport in our experiment.
Using $vec{k}$$cdot$$vec{p}$ theory, we derive an effective four band model describing the physics of the typical two-dimensional topological insulator (HgTe/CdTe quantum well) in the presence of out-of-plane in z-direction inversion breaking and in-
plane confining potentials. We find that up to third order in perturbation theory, only the inversion breaking potential generates new elements to the four band Hamiltonian that are off-diagonal in spin space. When this new effective Hamiltonian is folded into an effective two band model for the conduction (electron) or valence (heavy hole) bands, two competing terms appear: (1) a Rashba spin-orbit interaction originating from inversion breaking potential in z-direction and (2) an in-plane Pauli term as a consequence of the in-plane confining potential. Spin transport in the conduction band is further analysed within the Landauer-Buttiker formalism. We find that for asymmetrically doped HgTe quantum wells, the behaviour of the spin-Hall conductance is dominated by the Rashba term.
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