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Quantum nematic phases are analogous to classical liquid crystals. Like liquid crystals, which break the rotational symmetries of space, their quantum analogues break the point-group symmetry of the crystal due to strong electron-electron interactions, as in quantum Hall states, Sr3Ru2O7, and high temperature superconductors. Here, we present angle resolved magnetoresistance (AMRO) measurements that reveal a quantum nematic phase in the hexaboride EuB6. We identify the region in the temperature-magnetic field phase diagram where the magnetoresistance shows two-fold oscillations instead of the expected four-fold pattern. This is the same region where magnetic polarons were previously observed, suggesting that they drive the nematicity in EuB6. This is also the region of the phase diagram where EuB6 shows a colossal magnetoresistance (CMR). This novel interplay between magnetic and electronic properties could thus be harnessed for spintronic applications.
Two-dimensional electron gases in strong magnetic fields provide a canonical platform for realizing a variety of electronic ordering phenomena. Here we review the physics of one intriguing class of interaction-driven quantum Hall states: quantum Hall
Despite the enormous interest in quantum spin liquids, their experimental existence still awaits broad consensus. In particular, quenched disorder may turn a specific system into a spin glass and possibly preclude the formation of a quantum spin liqu
The time-dependent fluctuations of conductivity sigma have been studied in a two-dimensional electron system in low-mobility, small-size Si inversion layers. The noise power spectrum is ~1/f^{alpha} with alpha exhibiting a sharp jump at a certain ele
We report the observation of a metal-insulator transition in a two-dimensional electron gas in silicon. By applying substrate bias, we have varied the mobility of our samples, and observed the creation of the metallic phase when the mobility was high
The temperature dependence of conductivity $sigma (T)$ of a two-dimensional electron system in silicon has been studied in parallel magnetic fields B. At B=0, the system displays a metal-insulator transition at a critical electron density $n_c(0)$, a