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The results of studies of melting and crystallization processes in Bi-Ge layered film system are presented. These systems were prepared by subsequent condensation of components in vacuum. It has been shown that the melting temperature in system under study decreases with the decrease of Bi film thickness. The differential technique used for melting temperature registration enables us to measure the value of eutectic temperature $T_epsilon$ = 542 K in the system. The values of supercooling upon crystallization ($Delta T$ = 93 K) and wetting angle ($theta = 68^circ$) have been determined for Bi islands on amorphous Ge substrate.
The results of studies of supercooling upon crystallization value of Bi, Sn and Pb nanosized particles on the Al substrate and between the Al layers have been presented. It has been shown the efficiency of usage of layered film systems for investigat
By combining scanning probe microscopy with Raman and x-ray photoelectron spectroscopies, we investigate the evolution of CVD-grown graphene/Ge(001) as a function of the deposition temperature in close proximity to the Ge melting point, highlighting
Experimental and theoretical studies of spectral properties of chalcogenide Ge-S and As-Ge-S glasses and fibers are performed. A broad infrared (IR) luminescence band which covers the 1.2-2.3~$mu$m range with a lifetime about 6~$mu$s is discovered. S
Quasi-two-dimensional transition metal dichalcogenides (TMDs) are a key platform for exploring emergent nanoscale phenomena arising from complex interactions. Access to the underlying degrees of freedom on their natural time scales motivates the use
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