ترغب بنشر مسار تعليمي؟ اضغط هنا

Pressure tuning of the anomalous Hall effect in the chiral antiferromagnet Mn3Ge

170   0   0.0 ( 0 )
 نشر من قبل Michael Nicklas
 تاريخ النشر 2020
  مجال البحث فيزياء
والبحث باللغة English




اسأل ChatGPT حول البحث

We report on the pressure evolution of the giant anomalous Hall effect (AHE) in the chiral antiferromagnet Mn$_3$Ge. The AHE originating from the non-vanishing Berry curvature in Mn$_3$Ge can be continuously tuned by application of hydrostatic pressure. At room temperature, the Hall signal changes sign as a function of pressure and vanishes completely at $p=1.53$ GPa. Even though the Hall conductivity changes sign upon increasing pressure, the room-temperature saturation value of 23 ${rm Omega^{-1}cm^{-1}}$ at 2.85 GPa is remarkably high and comparable to the saturation value at ambient pressure of about 40 ${rm Omega^{-1}cm^{-1}}$. The change in the Hall conductivity can be directly linked to a gradual change of the size of the in-plane components of the Mn moments in the non-collinear triangular magnetic structure. Our findings, therefore, provide a route for tuning of the AHE in the chiral antiferromagnetic Mn$_3$Ge.



قيم البحث

اقرأ أيضاً

Time-reversal symmetry breaking is the basic physics concept underpinning many magnetic topological phenomena such as the anomalous Hall effect (AHE) and its quantized variant. The AHE has been primarily accompanied by a ferromagnetic dipole moment, which hinders the topological quantum states and limits data density in memory devices, or by a delicate noncollinear magnetic order with strong spin decoherence, both limiting their applicability. A potential breakthrough is the recent theoretical prediction of the AHE arising from collinear antiferromagnetism in an anisotropic crystal environment. This new mechanism does not require magnetic dipolar or noncollinear fields. However, it has not been experimentally observed to date. Here we demonstrate this unconventional mechanism by measuring the AHE in an epilayer of a rutile collinear antiferromagnet RuO$_2$. The observed anomalous Hall conductivity is large, exceeding 300 S/cm, and is in agreement with the Berry phase topological transport contribution. Our results open a new unexplored chapter of time-reversal symmetry breaking phenomena in the abundant class of collinear antiferromagnetic materials.
We measure the ordinary and the anomalous Hall effect in a set of yttrium iron garnet$|$platinum (YIG$|$Pt) bilayers via magnetization orientation dependent magnetoresistance experiments. Our data show that the presence of the ferrimagnetic insulator YIG leads to an anomalous Hall like signature in Pt, sensitive to both Pt thickness and temperature. Interpretation of the experimental findings in terms of the spin Hall anomalous Hall effect indicates that the imaginary part of the spin mixing interface conductance $G_{mathrm{i}}$ plays a crucial role in YIG$|$Pt bilayers. In particular, our data suggest a sign change in $G_{mathrm{i}}$ between $10,mathrm{K}$ and $300,mathrm{K}$. Additionally, we report a higher order Hall effect, which appears in thin Pt films on YIG at low temperatures.
Anomalous valley Hall (AVH) effect is a fundamental transport phenomenon in the field of condensed-matter physics. Usually, the research on AVH effect is mainly focused on 2D lattices with ferromagnetic order. Here, by means of model analysis, we pre sent a general design principle for realizing AVH effect in antiferromagnetic monolayers, which involves the introduction of nonequilibrium potentials to break of PT symmetry. Using first-principles calculations, we further demonstrate this design principle by stacking antiferromagnetic monolayer MnPSe3 on ferroelectric monolayer Sc2CO2 and achieve the AVH effect. The AVH effect can be well controlled by modulating the stacking pattern. In addition, by reversing the ferroelectric polarization of Sc2CO2 via electric field, the AVH effect in monolayer MnPSe3 can be readily switched on or off. The underlying physics are revealed in detail. Our findings open up a new direction of research on exploring AVH effect.
271 - Shiva Heidari , Reza Asgari 2019
In this paper, the chiral Hall effect of strained Weyl semimetals without any external magnetic field is proposed. Electron-phonon coupling emerges in the low-energy fermionic sector through a pseudogauge potential. We show that, by using chiral kine tic theory, the chiral Hall effect appears as a response to a real time-varying electric field in the presence of structural distortion and it causes spatial chirality and charges separation in a Weyl system. We also show that the coupling of the electrons to acoustic phonons as a gapless excitation leads to emerging an optical absorption peak at $omega=omega_{el}$, where $omega_{el}$ is defined as a characteristic frequency associated with the pseudomagnetic field. We also propose the strain-induced planar Hall effect as another transport signature of the chiral-anomaly equation.
While ferromagnets have been known and exploited for millennia, antiferromagnets (AFMs) were only discovered in the 1930s. The elusive nature indicates AFMs unique properties: At large scale, due to the absence of global magnetization, AFMs may appea r to behave like any non-magnetic material; However, such a seemingly mundane macroscopic magnetic property is highly nontrivial at microscopic level, where opposite spin alignment within the AFM unit cell forms a rich internal structure. In topological AFMs, such an internal structure leads to a new possibility, where topology and Berry phase can acquire distinct spatial textures. Here, we study this exciting possibility in an AFM Axion insulator, even-layered MnBi$_2$Te$_4$ flakes, where spatial degrees of freedom correspond to different layers. Remarkably, we report the observation of a new type of Hall effect, the layer Hall effect, where electrons from the top and bottom layers spontaneously deflect in opposite directions. Specifically, under no net electric field, even-layered MnBi$_2$Te$_4$ shows no anomalous Hall effect (AHE); However, applying an electric field isolates the response from one layer and leads to the surprising emergence of a large layer-polarized AHE (~50%$frac{e^2}{h}$). Such a layer Hall effect uncovers a highly rare layer-locked Berry curvature, which serves as a unique character of the space-time $mathcal{PT}$-symmetric AFM topological insulator state. Moreover, we found that the layer-locked Berry curvature can be manipulated by the Axion field, E$cdot$B, which drives the system between the opposite AFM states. Our results achieve previously unavailable pathways to detect and manipulate the rich internal spatial structure of fully-compensated topological AFMs. The layer-locked Berry curvature represents a first step towards spatial engineering of Berry phase, such as through layer-specific moire potential.
التعليقات
جاري جلب التعليقات جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
mircosoft-partner

هل ترغب بارسال اشعارات عن اخر التحديثات في شمرا-اكاديميا