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The intermediate band solar cell (IBSC) and quantum ratchet solar cell (QRSC) have the potential to surpass the efficiency of standard single-junction solar cells by allowing sub-gap photon absorption through states deep inside the band gap. High efficiency IBSC and QRSC devices have not yet been achieved, however, since introducing mid-gap states also increases recombination, which can harm the device. We consider the electronically coupled upconverter (ECUC) solar cell and show that it can achieve the same efficiencies as the QRSC. Although they are equivalent in the detailed balance limit, the ECUC is less sensitive to nonradiative processes, which makes it a more practical implementation for IB devices. We perform a case study of crystalline-silicon based ECUC cells, focusing on hydrogenated amorphous silicon as the upconverter material and highlighting potential dopants for the ECUC. These results illustrate a new path for the development of IB-based devices.
The quantum well solar cell (QWSC) has been proposed as a flexible means to ensuring current matching for tandem cells. This paper explores the further advantage afforded by the indication that QWSCs operate in the radiative limit because radiative c
The thermodynamic limit of photovoltaic efficiency for a single-junction solar cell can be readily predicted using the bandgap of the active light absorbing material. Such an approach overlooks the energy loss due to non-radiative electron-hole proce
An ultrabroadband upconversion device is demonstrated by direct tandem integration of a p-type GaAs/AlxGa1-xAs ratchet photodetector (RP) with a GaAs double heterojunction LED (DH-LED) using the molecular beam epitaxy (MBE). An ultrabroadband photore
Lead sulfide (PbS) quantum dot (QD) photovoltaics have reached impressive efficiencies of 12%, making them particularly promising for future applications. Like many other types of emerging photovoltaic devices, their environmental instability remains
The power conversion efficiency of an ultrathin CIGS solar cell was maximized using a coupled optoelectronic model to determine the optimal bandgap grading of the nonhomogeneous CIGS layer in the thickness direction. The bandgap of the CIGS layer was