ﻻ يوجد ملخص باللغة العربية
We report on a parylene chemical vapor deposition system custom designed for producing ultra-thin parylene films (5-100 nm thickness) for use as an electrical insulator in nanoscale electronic devices, including as the gate insulator in transistors. The system features a small deposition chamber that can be isolated and purged for process termination, a quartz crystal microbalance for monitoring deposition, and a rotating angled stage to increase coating conformity. The system was mostly built from off-the-shelf vacuum fittings allowing for easy modification and reduced cost compared to commercial parylene coating systems. The production of ultra-thin parylene films for device applications is a niche not well catered to by commercial coating systems, which are typically designed to give thicker coatings (microns) with high uniformity over much larger areas. An added advantage of our design for nanoscale device applications is that the small deposition chamber is readily removable for transfer to a glovebox to enable parylene deposition onto pristine surfaces prepared in oxygen/water-free environments with minimal contamination.
A new fabrication process is developed for growing Bi2Se3 topological insulators in the form of nanowires/nanobelts and ultra-thin films. It consists of two consecutive procedures: first Bi2Se3 nanowires/nanobelts are deposited by standard catalyst f
We analyze the influence of the surface passivation produced by oxides on the superconducting properties of $gamma$-Mo$_2$N ultra-thin films. The superconducting critical temperature of thin films grown directly on Si (100) with those using a buffer
The understanding of tribo- and electro-chemical phenomenons on the molecular level at a sliding interface is a field of growing interest. Fundamental chemical and physical insights of sliding surfaces are crucial for understanding wear at an interfa
We report the development of nanowire field-effect transistors featuring an ultra-thin parylene film as a polymer gate insulator. The room temperature, gas-phase deposition of parylene is an attractive alternative to oxide insulators prepared at high
We report low-temperature measurements of current-voltage characteristics for highly conductive Nb/Al-AlOx-Nb junctions with thicknesses of the Al interlayer ranging from 40 to 150 nm and ultra-thin barriers formed by diffusive oxidation of the Al su