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Edge-TCT and charge collection measurements with passive test structures made in LFoundry 150 nm CMOS process on p-type substrate with initial resistivity of over 3 k$Omega$cm are presented. Measurements were made before and after irradiation with reactor neutrons up to 2$cdot$10$^{15}$ n$_{mathrm{eq}}$/cm$^2$. Two sets of devices were investigated: unthinned (700 $mu$m) with substrate biased through the implant on top and thinned (200 $mu$m) with processed and metallised back plane. Depleted depth was estimated with Edge-TCT and collected charge was measured with $^{90}$Sr source using an external amplifier with 25 ns shaping time. Depleted depth at given bias voltage decreased with increasing neutron fluence but it was still larger than 70 $mu$m at 250 V after the highest fluence. After irradiation much higher collected charge was measured with thinned detectors with processed back plane although the same depleted depth was observed with Edge-TCT. Most probable value of collected charge of over 5000 electrons was measured also after irradiation to 2$cdot$10$^{15}$ n$_{mathrm{eq}}$/cm$^2$. This is sufficient to ensure successful operation of these detectors at the outer layer of the pixel detector in the ATLAS experiment at the upgraded HL-LHC.
The barrel region of the CMS pixel detector will be equipped with ``n-in-n type silicon sensors. They are processed on DOFZ material, use the moderated p-spray technique and feature a bias grid. The latter leads to a small fraction of the pixel area
This paper contains a compilation of parameters influencing the charge collection process extracted from a comprehensive study of partially depleted Monolithic Active Pixel Sensors with small (<25 um$^2$) collection electrodes fabricated in the Tower
Investigation of HV-CMOS sensors for use as a tracking detector in the ATLAS experiment at the upgraded LHC (HL-LHC) has recently been an active field of research. A potential candidate for a pixel detector built in Silicon-On-Insulator (SOI) technol
HV-CMOS pixel sensors are a promising option for the tracker upgrade of the ATLAS experiment at the LHC, as well as for other future tracking applications in which large areas are to be instrumented with radiation-tolerant silicon pixel sensors. We p
We report the design and characterization of a CMOS pixel direct charge sensor, Topmetal-II-, fabricated in a standard 0.35um CMOS Integrated Circuit process. The sensor utilizes exposed metal patches on top of each pixel to directly collect charge.