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We find efficient spin transport in Si at room temperature in lateral spin valves (LSVs). When the crystal orientation of the spin-transport channel in LSVs is changed from $langle$110$rangle$, which is a conventional cleavage direction, to $langle$100$rangle$, the maximum magnitude of the spin signals is markedly enhanced. From the analyses based on the one-dimensional spin diffusion model, we can understand that the spin injection/detection efficiency in Si$langle$100$rangle$ LSVs is larger than that in Si$langle$110$rangle$ ones. We infer that, in Si-based LSVs, the spin detection efficiency of the pure spin current is related to the crystallographic orientation of the valley structures of the conduction band in Si.
The specific band structure of graphene, with its unique valley structure and Dirac neutrality point separating hole states from electron states has led to the observation of new electronic transport phenomena such as anomalously quantized Hall effec
Spin transport in non-degenerate semiconductors is expected to pave a way to the creation of spin transistors, spin logic devices and reconfigurable logic circuits, because room temperature (RT) spin transport in Si has already been achieved. However
To mitigate climate change, our global society is harnessing direct (solar irradiation) and indirect (wind/water flow) sources of renewable electrical power generation. Emerging direct sources include current-producing thermal gradients in thermoelec
We report the observation of spin-to-charge current conversion in strained mercury telluride at room temperature, using spin pumping experiments. The conversion rates are found to be very high, with inverse Edelstein lengths up to 2.0 +/- 0.5 nm. The
Semiconductor light emitters compatible with standard Si integration technology (SIT) are of particular interest for overcoming limitations in the operating speed of microelectronic devices 1-3. Light sources based on group-IV elements would be SIT c