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تسجيل مستخدم جديدEffect of surface state hybridization on current-induced spin-orbit torque in thin topological insulator films
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We investigate the current-induced spin-orbit torque in thin topological insulator (TI) films in the presence of hybridization between the top and bottom surface states. We formulate the relation between spin torque and TI thickness, from which we derived the optimal value of the thickness to maximize the torque. We show numerically that in typical TI thin films made of $mathrm{Bi_2Se_3}$, the optimal thickness is about 3-5 nm.
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We report the observation of ferromagnetic resonance-driven spin pumping signals at room temperature in three-dimensional topological insulator thin films -- Bi2Se3 and (Bi,Sb)2Te3 -- deposited by molecular beam epitaxy on yttrium iron garnet thin fi
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We theoretically investigate the RKKY exchange coupling between two ferromagnets (FM) separated by a thin topological insulator film (TI). We find an unusual dependence of the RKKY exchange coupling on the TI thickness ($t_{TI}$). First, when $t_{TI}
$ decreases, the coupling amplitude increases at first and reaches its maximum value at some critical thickness, below which the amplitude turns to diminish. This trend is attributed to the hybridization between surfaces of the TI film, which opens a gap below critical thickness and thus turns the surfaces into insulating state from semi-metal state. In insulating phase, diamagnetism induced by the gap-opening compensates paramagnetism of Dirac state, resulting in a diminishing magnetic susceptibility and RKKY coupling. For typical parameters, the critical thickness in Bi2Se3 thin film is estimated to be in the range of 3-5 nm.
Field-like spin orbit torque in FeMn/Pt bilayers with ultra-thin polycrystalline FeMn has been characterized through planar Hall effect measurements. A large effective field is obtained for FeMn in the thickness range of 2 to 5 nm. The experimental o
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