ﻻ يوجد ملخص باللغة العربية
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diamond which is widely used for holding Nitrogen-vacancy centers, SiC has the advantage in terms of large-scale, high-quality and low cost growth, as well as advanced fabrication technique in optoelectronics, leading to the prospects for large scale quantum engineering. In this paper, we report experimental demonstration of the generation of nanoscale $V_{Si}$ single defect array through ion implantation without the need of annealing. $V_{Si}$ defects are generated in pre-determined locations with resolution of tens of nanometers. This can help in integrating $V_{Si}$ defects with the photonic structures which, in turn, can improve the emission and collection efficiency of $V_{Si}$ defects when it is used in spin photonic quantum network. On the other hand, the defects are shallow and they are generated $sim 40nm$ below the surface which can serve as critical resources in quantum sensing application.
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve the on-demand shallow spin-defect generation. In this work,
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding
Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy i
We demonstrate an all-optical thermometer based on an ensemble of silicon-vacancy centers (SiVs) in diamond by utilizing a temperature dependent shift of the SiV optical zero-phonon line transition frequency, $Deltalambda/Delta T= 6.8,mathrm{GHz/K}$.
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a chal