ﻻ يوجد ملخص باللغة العربية
Quantum systems combining indistinguishable photon generation and spin-based quantum information processing are essential for remote quantum applications and networking. However, identification of suitable systems in scalable platforms remains a challenge. Here, we investigate the silicon vacancy centre in silicon carbide and demonstrate controlled emission of indistinguishable and distinguishable photons via coherent spin manipulation. Using strong off-resonant excitation and collecting photons from the ultra-stable zero-phonon line optical transitions, we show a two-photon interference contrast close to 90% in Hong-Ou-Mandel type experiments. Further, we exploit the systems intimate spin-photon relation to spin-control the colour and indistinguishability of consecutively emitted photons. Our results provide a deep insight into the systems spin-phonon-photon physics and underline the potential of the industrially compatible silicon carbide platform for measurement-based entanglement distribution and photonic cluster state generation. Additional coupling to quantum registers based on recently demonstrated coupled individual nuclear spins would further allow for high-level network-relevant quantum information processing, such as error correction and entanglement purification.
Optically interfaced spins in the solid promise scalable quantum networks. Robust and reliable optical properties have so far been restricted to systems with inversion symmetry. Here, we release this stringent constraint by demonstrating outstanding
We demonstrate that silicon-vacancy (SiV) centers in diamond can be used to efficiently generate coherent optical photons with excellent spectral properties. We show that these features are due to the inversion symmetry associated with SiV centers, a
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical to achieve the on-demand shallow spin-defect generation. In this work,
Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single photon emission, good photostability, and long spin coherence time even at room temperature. As compared to diam
Silicon Carbide is a promising host material for spin defect based quantum sensors owing to its commercial availability and established techniques for electrical and optical microfabricated device integration. The negatively charged silicon vacancy i