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تسجيل مستخدم جديدShaping, imaging and controlling plasmonic interference fields at buried interfaces
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Filming and controlling plasmons at buried interfaces with nanometer (nm) and femtosecond (fs) resolution has yet to be achieved and is critical for next generation plasmonic/electronic devices. In this work, we use light to excite and shape a plasmonic interference pattern at a buried metal-dielectric interface in a nanostructured thin film. Plasmons are launched from a photoexcited array of nanocavities and their propagation is filmed via photon-induced near-field electron microscopy (PINEM). The resulting movie directly captures the plasmon dynamics, allowing quantification of their group velocity at approximately 0.3c, consistent with our theoretical predictions. Furthermore, we show that the light polarization and nanocavity design can be tailored to shape transient plasmonic gratings at the nanoscale. These results, demonstrating dynamical imaging with PINEM, pave the way for the fs/nm visualization and control of plasmonic fields in advanced heterostructures based on novel 2D materials such as graphene, MoS$_2$, and ultrathin metal films.
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The semiconductor-metal junction is one of the most critical factors for high performance electronic devices. In two-dimensional (2D) semiconductor devices, minimizing the voltage drop at this junction is particularly challenging and important. Despi
te numerous studies concerning contact resistance in 2D semiconductors, the exact nature of the buried interface under a three-dimensional (3D) metal remains unclear. Herein, we report the direct measurement of electrical and optical responses of 2D semiconductor-metal buried interfaces using a recently developed metal-assisted transfer technique to expose the buried interface which is then directly investigated using scanning probe techniques. We characterize the spatially varying electronic and optical properties of this buried interface with < 20 nm resolution. To be specific, potential, conductance and photoluminescence at the buried metal/MoS2 interface are correlated as a function of a variety of metal deposition conditions as well as the type of metal contacts. We observe that direct evaporation of Au on MoS2 induces a large strain of ~5% in the MoS2 which, coupled with charge transfer, leads to degenerate doping of the MoS2 underneath the contact. These factors lead to improvement of contact resistance to record values of 138 kohm-um, as measured using local conductance probes. This approach was adopted to characterize MoS2-In/Au alloy interfaces, demonstrating contact resistance as low as 63 kohm-um. Our results highlight that the MoS2/Metal interface is sensitive to device fabrication methods, and provides a universal strategy to characterize buried contact interfaces involving 2D semiconductors.
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers d
uring their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.
We show that interference can be the principle of operation of an all-optical switch and other nanoscale plasmonic interference devices (PIDs). The optical response of two types of planar plasmonic waveguides is studied theoretically: bent chains and
Y-shaped configurations of closely-spaced metallic nanospheres. We study symmetric Y-shape arrays as an example of an all-optical switch and demonstrate that effective phase- and amplitude-sensitive control of the output signal can be achieved due to interference effects.
The observation of magnetic interaction at the interface between nonmagnetic oxides has attracted much attention in recent years. In this report, we show that the Kondo-like scattering at the SrTiO3-based conducting interface is enhanced by increasin
g the lattice mismatch and growth oxygen pressure PO2. For the 26-unit-cell LaAlO3/SrTiO3 (LAO/STO) interface with lattice mismatch being 3.0%, the Kondo-like scattering is observed when PO2 is beyond 1 mTorr. By contrast, when the lattice mismatch is reduced to 1.0% at the (La0.3Sr0.7)(Al0.65Ta0.35)O3/SrTiO3 (LSAT/STO) interface, the metallic state is always preserved up to PO2 of 100 mTorr. The data from Hall measurement and X-ray absorption near edge structure (XANES) spectroscopy reveal that the larger amount of localized Ti3+ ions are formed at the LAO/STO interface compared to LSAT/STO. Those localized Ti3+ ions with unpaired electrons can be spin-polarized to scatter mobile electrons, responsible for the Kondo-like scattering observed at the LAO/STO interface.
We have studied the transport properties of LaTiO3/SrTiO3 (LTO/STO) heterostructures. In spite of 2D growth observed in reflection high energy electron diffraction, Transmission Electron Microscopy images revealed that the samples tend to amorphize.
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