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تسجيل مستخدم جديدSignature of strong spin-orbital coupling in the large non-saturating magnetoresistance material WTe2
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We report the detailed electronic structure of WTe$_2$ by high resolution angle-resolved photoemission spectroscopy. Unlike the simple one electron plus one hole pocket type of Fermi surface topology reported before, we resolved a rather complicated Fermi surface of WTe$_2$. Specifically, there are totally nine Fermi pockets, including one hole pocket at the Brillouin zone center $Gamma$, and two hole pockets and two electron pockets on each side of $Gamma$ along the $Gamma$-$X$ direction. Remarkably, we have observed circular dichroism in our photoemission spectra, which suggests that the orbital angular momentum exhibits a rich texture at various sections of the Fermi surface. As reported previously for topological insulators and Rashiba systems, such a circular dichroism is a signature for spin-orbital coupling (SOC). This is further confirmed by our density functional theory calculations, where the spin texture is qualitatively reproduced as the conjugate consequence of SOC. Since the backscattering processes are directly involved with the resistivity, our data suggest that the SOC and the related spin and orbital angular momentum textures may be considered in the understanding of the anomalous magnetoresistance of WTe$_2$.
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We present a detailed study of magnetoresistance r{ho}xx(H), Hall effect r{ho}xy(H), and electrolyte gating effect in thin (<100 nm) exfoliated crystals of WTe2. We observe quantum oscillations in H of both r{ho}xx(H) and r{ho}xy(H), and identify fou
r oscillation frequencies consistent with previous reports in thick crystals. r{ho}xy(H) is linear in H at low H consistent with near-perfect electron-hole compensation, however becomes nonlinear and changes sign with increasing H, implying a breakdown of compensation. A field-dependent ratio of carrier concentrations p/n can consistently explain r{ho}xx(H) and r{ho}xy(H) within a two-fluid model. We also employ an electrolytic gate to highly electron-dope WTe2 with Li. The non-saturating r{ho}xx(H) persists to H = 14 T with magnetoresistance ratio exceeding 2 x 104 %, even with significant deviation from perfect electron-hole compensation (p/n = 0.84), where the two-fluid model predicts a saturating r{ho}xx(H). Our results suggest electron-hole compensation is not the mechanism for extremely large magnetoresistance in WTe2, other alternative explanations need to be considered.
Recently, A2B3 type strong spin orbital coupling compounds such as Bi2Te3, Bi2Se3 and Sb2Te3 were theoretically predicated to be topological insulators and demonstrated through experimental efforts. The counterpart compound Sb2Se3 on the other hand w
as found to be topological trivial, but further theoretical studies indicated that the pressure might induce Sb2Se3 into a topological nontrivial state. Here, we report on the discovery of superconductivity in Sb2Se3 single crystal induced via pressure. Our experiments indicated that Sb2Se3 became superconductive at high pressures above 10 GPa proceeded by a pressure induced insulator to metal like transition at ~3 GPa which should be related to the topological quantum transition. The superconducting transition temperature (TC) increased to around 8.0 K with pressure up to 40 GPa while it keeps ambient structure. High pressure Raman revealed that new modes appeared around 10 GPa and 20 GPa, respectively, which correspond to occurrence of superconductivity and to the change of TC slop as the function of high pressure in conjunction with the evolutions of structural parameters at high pressures.
Weak antilocalization (WAL) effects in Bi2Te3 single crystals have been investigated at high and low bulk charge carrier concentrations. At low charge carrier density the WAL curves scale with the normal component of the magnetic field, demonstrating
the dominance of topological surface states in magnetoconductivity. At high charge carrier density the WAL curves scale with neither the applied field nor its normal component, implying a mixture of bulk and surface conduction. WAL due to topological surface states shows no dependence on the nature (electrons or holes) of the bulk charge carriers. The observations of an extremely large, non-saturating magnetoresistance, and ultrahigh mobility in the samples with lower carrier density further support the presence of surface states. The physical parameters characterizing the WAL effects are calculated using the Hikami-Larkin-Nagaoka formula. At high charge carrier concentrations, there is a greater number of conduction channels and a decrease in the phase coherence length compared to low charge carrier concentrations. The extremely large magnetoresistance and high mobility of topological insulators have great technological value and can be exploited in magneto-electric sensors and memory devices.
We investigate the 5d transition metal oxide BaOsO$_3$ within a combination of density functional theory (DFT) and dynamical mean-field theory (DMFT), using a matrix-product-state impurity solver. BaOsO$_3$ has 4 electrons in the t$_{2g}$ shell akin
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We report synthesis, structural details and electrical transport properties of topological insulator Bi2Te3. The single crystalline specimens of Bi2Te3 are obtained from high temperature (950C) melt and slow cooling (2C/hour). The resultant crystals
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