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In this work, we studied phase formation, structural and magnetic properties of iron-nitride (Fe-N) thin films deposited using high power impulse magnetron sputtering (HiPIMS) and direct current magnetron sputtering (dc-MS). The nitrogen partial pressure during deposition was systematically varied both in HiPIMS and dc-MS. Resulting Fe-N films were characterized for their microstructure, magnetic properties and nitrogen concentration. We found that HiPIMS deposited Fe-N films show a globular nanocrystalline microstructure and improved soft magnetic properties. In addition, it was found that the nitrogen reactivity impedes in HiPIMS as compared to dc-MS. Obtained results can be understood in terms of distinct plasma properties of HiPIMS.
The effect of magnetron power on the room temperature 1.54 $mu$m infra-red photoluminescence intensity of erbium doped AlN films grown by r. f. magnetron sputtering, has been studied. The AlN:Er thin films were deposited on (001) Silicon substrates.
Rare-earth (R) nickelates (such as perovskite RNiO3, trilayer R4Ni3O10, and infinite layer RNiO2) have attracted tremendous interest very recently. However, unlike widely studied RNiO3 and RNiO2 films, the synthesis of trilayer nickelate R4Ni3O10 fil
In the prospect of understanding the photoluminescence mechanisms of AlN films doped with erbium and targeting photonic applications we have synthesized non doped and Er-doped AlN films with different crystallized nanostructures by using PVD magnetro
Nanocrystalline n-AlN:Er thin films were deposited on (001) Silicon substrates by r. f. magnetron sputtering at room temperature to study the correlation between 1.54 $mu$m IR photoluminescence (PL) intensity, AlN crystalline structure and Er concent
As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a wide