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Nuclear magnetic resonance (NMR) and transport measurements have been performed at high magnetic fields and low temperatures in a series of $n$-type Bi$_{2}$Se$_{3}$ crystals. In low density samples, a complete spin polarization of the electronic system is achieved, as observed from the saturation of the isotropic component of the $^{209}$Bi NMR shift above a certain magnetic field. The corresponding spin splitting, defined in the phenomenological approach of a 3D electron gas with a large (spin-orbit-induced) effective $g$-factor, scales as expected with the Fermi energy independently determined by simultaneous transport measurements. Both the effective electronic $g$-factor and the contact hyperfine coupling constant are precisely determined. The magnitude of this latter reveals a non negligible $s$-character of the electronic wave function at the bottom of the conduction band. Our results show that the bulk electronic spin polarization can be directly probed via NMR and pave the way for future NMR investigations of the electronic states in Bi-based topological insulators.
We report spin- and angle-resolved photoemission studies of a topological insulator from the infinitely adaptive series between elemental Bi and Bi$_2$Se$_3$. The compound, based on Bi$_4$Se$_3$, is a 1:1 natural superlattice of alternating Bi$_2$ la
We study the fate of the surface states of Bi$_2$Se$_3$ under disorder with strength larger than the bulk gap, caused by neon sputtering and nonmagnetic adsorbates. We find that neon sputtering introduces strong but dilute defects, which can be model
The influence of individual impurities of Fe on the electronic properties of topological insulator Bi$_2$Se$_3$ is studied by Scanning Tunneling Microscopy. The microscope tip is used in order to remotely charge/discharge Fe impurities. The charging
We use optical pump--THz probe spectroscopy at low temperatures to study the hot carrier response in thin Bi$_2$Se$_3$ films of several thicknesses, allowing us to separate the bulk from the surface transient response. We find that for thinner films
The protected electron states at the boundaries or on the surfaces of topological insulators (TIs) have been the subject of intense theoretical and experimental investigations. Such states are enforced by very strong spin-orbit interaction in solids