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The proximity effect (PE) between superconductor and confined electrons can induce the effective pairing phenomena of electrons in nanowire or quantum dot (QD). Through interpreting the PE as an exchange of virtually quasi-excitation in a largely gapped superconductor, we found that there exists another induced dynamic process. Unlike the effective pairing that mixes the QD electron states coherently, this extra process leads to dephasing of the QD. In a case study, the dephasing time is inversely proportional to the Coulomb interaction strength between two electrons in the QD. Further theoretical investigations imply that this dephasing effect can decrease the quality of the zero temperature mesoscopic electron transportation measurements by lowering and broadening the corresponding differential conductance peaks.
We have studied the dephasing of a superconducting flux-qubit coupled to a DC-SQUID based oscillator. By varying the bias conditions of both circuits we were able to tune their effective coupling strength. This allowed us to measure the effect of suc
Superconductors are known to be excellent thermal insulators at low temperature owing to the presence of the energy gap in their density of states (DOS). In this context, the superconducting textit{proximity effect} allows to tune the local DOS of a
We study Andreev reflection in a ballistic one-dimensional channel coupled in parallel to a superconductor via a tunnel barrier of finite length $L$. The dependence of the low-energy Andreev reflection probability $R_A$ on $L$ reveals the existence o
We present a semi-analytic and asymptotically exact solution to the problem of phonon-induced decoherence in a quantum dot-microcavity system. Particular emphasis is placed on the linear polarization and optical absorption, but the approach presented
We consider the dephasing rate of an electron level in a quantum dot, placed next to a fluctuating edge current in the fractional quantum Hall effect. Using perturbation theory, we show that this rate has an anomalous dependence on the bias voltage a