اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدHigh Performance Piezoelectric Devices Based on Aligned Arrays of Nanofibers of Poly[(vinylidenefluoride-co-trifluoroethylene]
42
0
0.0
(
0
)
تأليف
Luana Persano
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Multifunctional capability, flexible design, rugged lightweight construction, and self-powered operation are desired attributes for electronics that directly interface with the human body or with advanced robotic systems. For these and related applications, piezoelectric materials, in forms that offer the ability to bend and stretch, are attractive for pressure/force sensors and mechanical energy harvesters. In this paper we introduce a large area, flexible piezoelectric material that consists of sheets of electrospun fibers of the polymer poly[(vinylidenefluoride-co-trifluoroethylene]. The flow and mechanical conditions associated with the spinning process yield free-standing, three-dimensional architectures of aligned arrangements of such fibers, in which the polymer chains adopt strongly preferential orientations. The resulting material offers exceptional piezoelectric characteristics, to enable, as an example, ultra-high sensitivity for measuring pressure, even at exceptionally small values (0.1 Pa). Quantitative analysis provides detailed insights into the pressure sensing mechanisms, and engineering design rules. Applications range from self-powered micro-mechanical elements, to self-balancing robots and sensitive impact detectors.
قيم البحث
اقرأ أيضاً
The intrinsic flexible character of polymeric materials also causes remarkable strain deformations along directions perpendicular to the applied stress. Here the biaxial response in the shear piezoelectricity of polyvinylidenefluoride copolymers is a
nalyzed and their full piezoelectric tensors are provided. The microscopic shear is exploited in single suspended nanowires bent by localized loading to couple flexural deformation and transverse piezoelectric response.
High-performance thermoelectric oxides could offer a great energy solution for integrated and embedded applications in sensing and electronics industries. Oxides, however, often suffer from low Seebeck coefficient when compared with other classes of
thermoelectric materials. In search of high-performance thermoelectric oxides, we present a comprehensive density functional investigation, based on GGA$+U$ formalism, surveying the 3d and 4d transition-metal-containing ferrites of the spinel structure. Consequently, we predict MnFe$_2$O$_4$ and RhFe$_2$O$_4$ have Seebeck coefficients of $sim pm 600$ $mu$V K$^{-1}$ at near room temperature, achieved by light hole and electron doping. Furthermore, CrFe$_2$O$_4$ and MoFe$_2$O$_4$ have even higher ambient Seebeck coefficients at $sim pm 700$ $mu$V K$^{-1}$. In the latter compounds, the Seebeck coefficient is approximately a flat function of temperature up to $sim 700$ K, offering a tremendous operational convenience. Additionally, MoFe$_2$O$_4$ doped with $10^{19}$ holes/cm$^3$ has a calculated thermoelectric power factor of $689.81$ $mu$W K$^{-2}$ m$^{-1}$ at $300$ K, and $455.67$ $mu$W K$^{-2}$ m$^{-1}$ at $600$ K. The thermoelectric properties predicted here can bring these thermoelectric oxides to applications at lower temperatures traditionally fulfilled by more toxic and otherwise burdensome materials.
The linear dispersion relation in graphene[1,2] gives rise to a surprising prediction: the resistivity due to isotropic scatterers (e.g. white-noise disorder[3] or phonons[4-8]) is independent of carrier density n. Here we show that acoustic phonon s
cattering[4-6] is indeed independent of n, and places an intrinsic limit on the resistivity in graphene of only 30 Ohm at room temperature (RT). At a technologically-relevant carrier density of 10^12 cm^-2, the mean free path for electron-acoustic phonon scattering is >2 microns, and the intrinsic mobility limit is 2x10^5 cm^2/Vs, exceeding the highest known inorganic semiconductor (InSb, ~7.7x10^4 cm^2/Vs[9]) and semiconducting carbon nanotubes (~1x10^5 cm^2/Vs[10]). We also show that extrinsic scattering by surface phonons of the SiO2 substrate[11,12] adds a strong temperature dependent resistivity above ~200 K[8], limiting the RT mobility to ~4x10^4 cm^2/Vs, pointing out the importance of substrate choice for graphene devices[13].
A novel strategy for the large scale and continuous production of aligned carbon nanotube arrays using millimeter-diameter spheres as growth substrates is reported. The present technique is more productive than the conventional process on flat wafers
because of the higher available growth surface and the good fluidity of the spherical substrates. It can be adapted for the industrial production and application of aligned carbon nanotube arrays with lengths up to millimeter.
There is a renewed interest in photovoltaic solar thermal (PVT) hybrid systems, which harvest solar energy for heat and electricity. Typically, a main focus of a PVT system is to cool the photovoltaic (PV) cells to improve the electrical performance,
however, this causes the thermal component to under-perform compared to a solar thermal collector. The low temperature coefficients of amorphous silicon (a-Si:H) allow for the PV cells to be operated at higher temperatures and are a potential candidate for a more symbiotic PVT system. The fundamental challenge of a-Si:H PV is light-induced degradation known as the Staebler-Wronski effect (SWE). Fortunately, SWE is reversible and the a-Si:H PV efficiency can be returned to its initial state if the cell is annealed. Thus an opportunity exists to deposit a-Si:H directly on the solar thermal absorber plate where the cells could reach the high temperatures required for annealing. In this study, this opportunity is explored experimentally. First a-Si:H PV cells were annealed for 1 hour at 100degreeC on a 12 hour cycle and for the remaining time the cells were degraded at 50degreeC in order to simulate stagnation of a PVT system for 1 hour once a day. It was found that, when comparing the cells after stabilization at normal 50degreeC degradation, this annealing sequence resulted in a 10.6% energy gain when compared to a cell that was only degraded at 50degreeC.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
