ﻻ يوجد ملخص باللغة العربية
We study theoretically transport through a semiconducting nanowire (NW) in the presence of Rashba spin orbit interaction, uniform magnetic field, and spatially modulated magnetic field. The system is fully gapped, and the interplay between the spin orbit interaction and the magnetic fields leads to fractionally charged fermion (FF) bound states of Jackiw-Rebbi type at each end of the nanowire. We investigate the transport and noise behavior of a N/NW/N system, where the wire is contacted by two normal leads (N), and we look for possible signatures that could help in the experimental detection of such states. We find that the differential conductance and the shot noise exhibit a sub-gap structure which fully reveals the presence of the FF state. Our predictions can be tested in standard two-terminal measurements through InSb/InAs nanowires.
We study the phenomenon of adiabatic quantum charge pumping in systems supporting fractionally charged fermionic bound states, in two different setups. The first quantum pump setup consists of a charge-density-modulated quantum wire, and the second o
We theoretically analyze the Andreev bound states and their coupling to external radiation in superconductor-nanowire-superconductor Josephson junctions. We provide an effective Hamiltonian for the junction projected onto the Andreev level subspace a
We consider a Rashba nanowire with proximity gap which can be brought into the topological phase by tuning external magnetic field or chemical potential. We study spin and charge of the bulk quasiparticle states when passing through the topological t
We study analytically and numerically the renormalization of the $g$-factor in semiconducting Rashba nanowires (NWs), consisting of a normal and superconducting section. If the potential barrier between the sections is high, a quantum dot (QD) is for
We use $vec{k}cdotvec{p}$ theory to estimate the Rashba spin-orbit coupling (SOC) in large semiconductor nanowires. We specifically investigate GaAs- and InSb-based devices with different gate configurations to control symmetry and localization of th