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Single-walled carbon nanotubes are promising nanoelectronic materials but face long-standing challenges including production of pure semiconducting SWNTs and integration into ordered structures. Here, highly pure semiconducting single-walled carbon nanotubes are separated from bulk materials and self-assembled into densely aligned rafts driven by depletion attraction forces. Microscopy and spectroscopy revealed a high degree of alignment and a high packing density of ~100 tubes/micron within SWNT rafts. Field-effect transistors made from aligned SWNT rafts afforded short channel (~150 nm long) devices comprised of tens of purely semiconducting SWNTs derived from chemical separation within a < 1 micron channel width, achieving unprecedented high on-currents (up to ~120 microamperes per device) with high on/off ratios. The average on-current was ~ 3-4 microamperes per tube. The results demonstrated densely aligned high quality semiconducting SWNTs for integration into high performance nanoelectronics.
Single walled carbon nanotubes exhibit advanced electrical and surface properties useful for high performance nanoelectronics. Important to future manufacturing of nanotube circuits is large scale assembly of SWNTs into aligned forms. Despite progres
Ultrafast terahertz spectroscopy accesses the {em dark} excitonic ground state in resonantly-excited (6,5) SWNTs via internal, direct dipole-allowed transitions between lowest lying dark-bright pair state $sim$6 meV. An analytical model reproduces th
We have calculated the binding energy of various nucleobases (guanine (G), adenine (A), thymine (T) and cytosine (C)) with (5,5) single-walled carbon nanotubes (SWNTs) using ab-initio Hartre-Fock method (HF) together with force field calculations. Th
Single-walled carbon nanotubes (SWCNT) can be assembled into various macroscopic architectures, most notably continuous fibers and films, produced currently on a kilometer per day scale by floating catalyst chemical vapor depositionand spinning from
The dynamical conductance of electrically contacted single-walled carbon nanotubes is measured from dc to 10 GHz as a function of source-drain voltage in both the low-field and high-field limits. The ac conductance of the nanotube itself is found to