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We use the quantum correlations of twin-beams of light to probe the added noise when one of the beams propagates through a medium with anomalous dispersion. The experiment is based on two successive four-wave mixing processes in rubidium vapor, which allow for the generation of bright two-mode-squeezed twin-beams followed by a controlled advancement while maintaining the shared quantum-correlations between the beams. The demonstrated effect allows the study of irreversible decoherence in a medium exhibiting anomalous dispersion, and for the first time shows the advancement of a bright nonclassical state of light. The advancement and corresponding degradation of the quantum correlations are found to be operating near the fundamental quantum limit imposed by using a phase-insensitive amplifier.
Quantum memories are essential for large-scale quantum information networks. Along with high efficiency, storage lifetime and optical bandwidth, it is critical that the memory add negligible noise to the recalled signal. A common source of noise in o
Excitation of molecules by incident incoherent electromagnetic radiation, such as sunlight, is described in detail and contrasted with the effect of coherent (e.g. laser) light. The nature of the quantum coherences induced by the former, relevant to
Simulations of high-complexity quantum systems, which are intractable for classical computers, can be efficiently done with quantum computers. Similarly, the increasingly complex quantum electronic circuits themselves will also need efficient simulat
We prepare number stabilized ultracold clouds through the real-time analysis of non-destructive images and the application of feedback. In our experiments, the atom number ${Nsim10^6}$ is determined by high precision Faraday imaging with uncertainty
Cavity quantum electrodynamics describes the fundamental interactions between light and matter, and how they can be controlled by shaping the local environment. For example, optical microcavities allow high-efficiency detection and manipulation of si