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With the demand for improved performance in microfabricated devices, the necessity to apply greater electric fields and voltages becomes evident. When operating in vacuum, the voltage is typically limited by surface flashover forming along the surface of a dielectric. By modifying the fabrication process we have discovered it is possible to more than double the flashover voltage. Our finding has significant impact on the realization of next-generation micro- and nano-fabricated devices and for the fabrication of on-chip ion trap arrays for the realization of scalable ion quantum technology.
Fundamental electronic processes such as charge-carrier transport and recombination play a critical role in determining the efficiency of hybrid perovskite solar cells. The presence of mobile ions complicates the development of a clear understanding
We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and |1L>, reside
The presence of interface recombination in a complex multilayered thin-film solar structure causes a disparity between the internal open-circuit voltage (VOC,in), measured by photoluminescence, and the external open-circuit voltage (VOC,ex) i.e. an a
This study measures the voltage at which flashover occurs in compressed air for a variety of dielectric materials and lengths in a uniform field for DC voltages up to 100 kV. Statistical time lag is recorded and characterized, displaying a roughly ex
We examine the possibility of using graphene nanoribbons (GNRs) with directly substituted chromium atoms as spintronic device. Using density functional theory, we simulate a voltage bias across a constructed GNR in a device setup, where a magnetic di