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We design and analyze a solid state qubit based on electron spin and controlled by electrical means. The coded qubit is composed of a three-electron complex in three tunable gated quantum dots. The two logical states of a qubit, |0L> and |1L>, reside in a degenerate subspace of total spin S=1/2 states. We demonstrate how applying voltages to specific gates changes the one-electron properties of the structure, and show how electron-electron interaction translates these changes into the manipulation of the two lowest energy states of the three-electron complex.
Voltage control of magnetism and spintronics have been highly desirable, but rarely realized. In this work, we show voltage-controlled spin-orbit torque (SOT) switching in W/CoFeB/MgO films with perpendicular magnetic anisotropy (PMA) with voltage ad
Measurement of quantum systems inevitably involves disturbance in various forms. Within the limits imposed by quantum mechanics, however, one can design an ideal projective measurement that does not introduce a back action on the measured observable,
The discovery of new mechanisms of controlling magnetic properties by electric fields or currents furthers the fundamental understanding of magnetism and has important implications for practical use. Here, we present a novel approach of utilizing res
Transistors are key elements for enabling computational hardware in both classical and quantum domains. Here, we propose a voltage-gated spin transistor using itinerant electrons in the Hubbard model which acts at the level of single electron spins.
The spin polarization of the electron current in a p-(Ga,Mn)As-n-(Al,Ga)As-Zener tunnel diode, which is embedded in a light-emitting diode, has been studied theoretically. A series of self-consistent simulations determines the charge distribution, th