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Advantages of gated silicon single photon detectors

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 نشر من قبل Tommaso Lunghi
 تاريخ النشر 2012
  مجال البحث فيزياء
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We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30{deg}C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the charge persistence effect, whereby a detector clicks some time after having been illuminated.



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