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We present a gated silicon single photon detector based on a commercially available avalanche photodiode. Our detector achieves a photon detection efficiency of 45pm5% at 808 nm with 2x 10^-6 dark count per ns at -30V of excess bias and -30{deg}C. We compare gated and free-running detectors and show that this mode of operation has significant advantages in two representative experimental scenarios: detecting a single photon either hidden in faint continuous light or after a strong pulse. We also explore, at different temperatures and incident light intensities, the charge persistence effect, whereby a detector clicks some time after having been illuminated.
In this work, we present a novel device that is a combination of a superconducting nanowire single-photon detector and a superconducting multi-level memory. We show that these devices can be used to count the number of detections through single-photo
Integrated quantum photonics, which allows for the development and implementation of chip-scale devices, is recognized as a key enabling technology on the road towards scalable quantum networking schemes. However, many state-of-the-art integrated qua
There are several applications which require high position resolution UV imaging. For these applications we have developed and successfully tested a new version of a 2D UV single photon imaging detector based on a microgap RPC. The main features of s
We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), d
We show several techniques for using integrated-photonic waveguide structures to simultaneously characterize multiple waveguide-integrated superconducting-nanowire detectors with a single fiber input. The first set of structures allows direct compari