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We report an automated characterization of a single-photon detector based on commercial silicon avalanche photodiode (PerkinElmer C30902SH). The photodiode is characterized by I-V curves at different illumination levels (darkness, 10 pW and 10 uW), dark count rate and photon detection efficiency at different bias voltages. The automated characterization routine is implemented in C++ running on a Linux computer.
We report operation and characterization of a lab-assembled single-photon detector based on commercial silicon avalanche photodiodes (PerkinElmer C30902SH, C30921SH). Dark count rate as low as 5 Hz was achieved by cooling the photodiodes down to -80
We present the first operation of the Avalanche Photodiode (APD) from Hamamatsu to xenon scintillation light and to direct X-rays of 22.1 keV and 5.9 keV. A large non-linear response was observed for the direct X-ray detection. At 415 V APD bias volt
The single-photon avalanche photodiode(SPAD) has been widely used in research on quantum optics. The afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most experiments and needs to be carefully handled. F
Single-photon avalanche photodiode(SPAD) has been widely used in researching of quantum optics. Afterpulsing effect, which is an intrinsic character of SPAD, affects the system performance in most of the experiments and needs to be carefully handled.
Silicon Photo-Multipliers (SiPMs) are detectors sensitive to single photons that are used to detect scintillation and Cherenkov light in a variety of physics and medical-imaging applications. SiPMs measure single photons by amplifying the photo-gener