اشترك بالحزمة الذهبية واحصل على وصول غير محدود شمرا أكاديميا
تسجيل مستخدم جديدTuning hole mobility in InP nanowires
224
0
0.0
(
0
)
اسأل ChatGPT حول البحث
ﻻ يوجد ملخص باللغة العربية
Transport properties of holes in InP nanowires were calculated considering electron-phonon interaction via deformation potentials, the effect of temperature and strain fields. Using molecular dynamics, we simulate nanowire structures, LO-phonon energy renormalization and lifetime. The valence band ground state changes between light- and heavy-hole character, as the strain fields and the nanowire size are changed. Drastic changes in the mobility arise with the onset of resonance between the LO-phonons and the separation between valence subbands.
قيم البحث
اقرأ أيضاً
We report a systematic study of p-type polarization induced doping in graded AlGaN nanowire light emitting diodes grown on silicon wafers by plasma-assisted molecular beam epitaxy. The composition gradient in the p-type base is varied in a set of sam
ples from 0.7 %Al/nm to 4.95 %Al/nm corresponding to negative bound polarization charge densities of 2.2x10^18 cm^-3 to 1.6x10^19 cm^-3. Capacitance measurements and energy band modeling reveal that for gradients greater than or equal to 1.30 %Al/nm, the deep donor concentration is negligible and free hole concentrations roughly equal to the bound polarization charge density are achieved up to 1.6x10^19 cm^-3 at a gradient of 4.95 %Al/nm. Accurate grading lengths in the p- and n-side of the pn-junction are extracted from scanning transmission electron microscopy images and are used to support energy band calculation and capacitance modeling. These results demonstrate the robust nature of p-type polarization doping in nanowires and put an upper bound on the magnitude of deep donor compensation.
We present an analytical calculation of the velocity of a single 180 degree domain wall in a magnetic structure with reduced thickness and/or lateral dimension under the combined action of an external applied magnetic field and an electrical current.
As for the case of field-induced domain wall propagation in thick films, two motion regimes with different mobilities are obtained, below and far above the so-called Walker field. Additionally, for the case of current induced motion, a Walker-like current density threshold can be defined. When the dimensions of the system become comparable to the domain wall width, the threshold field and current density, stating the walls internal structure stability, are reduced by the same geometrical demagnetising factor which accounts for the confinement. This points out the fact that the velocity dependence over an extended field/current range and the knowledge of the Walker breakdown are mandatory to draw conclusions about the phenomenological Gilbert damping parameter tuning the magnetisation dynamics.
We study experimentally and theoretically the in-plane magnetic field dependence of the coupling between dots forming a vertically stacked double dot molecule. The InAsP molecule is grown epitaxially in an InP nanowire and interrogated optically at m
illikelvin temperatures. The strength of interdot tunneling, leading to the formation of the bonding-antibonding pair of molecular orbitals, is investigated by adjusting the sample geometry. For specific geometries, we show that the interdot coupling can be controlled in-situ using a magnetic field-mediated redistribution of interdot coupling strengths. This is an important milestone in the development of qubits required in future quantum information technologies.
The combination of core/shell geometry and band gap engineering in nanowire heterostructures can be employed to realize systems with novel transport and optical properties. Here, we report on the growth of InAs/InP/GaAsSb core-dual-shell nanowires by
catalyst-free chemical beam epitaxy on Si(111) substrates. Detailed morphological, structural, and compositional analyses of the nanowires as a function of growth parameters were carried out by scanning and transmission electron microscopy and by energy-dispersive X-ray spectroscopy. Furthermore, by combining the scanning transmission electron microscopy-Moire technique with geometric phase analysis, we studied the residual strain and the relaxation mechanisms in this system. We found that InP shell facets are well-developed along all the crystallographic directions only when the nominal thickness is above 1 nm, suggesting an island-growth mode. Moreover, the crystallographic analysis indicates that both InP and GaAsSb shells grow almost coherently to the InAs core along the 112 direction and elastically compressed along the 110 direction. For InP shell thickness above 8 nm, some dislocations and roughening occur at the interfaces. This study provides useful general guidelines for the fabrication of high-quality devices based on these core-dual-shell nanowires.
Si dominates the semiconductor industry material but possesses an abnormally low room temperature hole mobility (505 cm^2/Vs), which is four times lower than that of Diamond and Ge (2000 cm^2/Vs), two adjacent neighbours in the group IV column in the
Periodic Table. In the past half-century, extensive efforts have been made to overcome the challenges of Si technology caused by low mobility in Si. However, the fundamental understanding of the underlying mechanisms remains lacking. Here, we theoretically reproduce the experimental data for conventional group IV and III-V semiconductors without involving adjustable parameters by curing the shortcoming of classical models. We uncover that the abnormally low hole mobility in Si originating from a combination of the strong interband scattering resulting from its weak spin-orbit coupling and the intensive participation of optical phonons in hole-phonon scattering. In contrast, the strong spin-orbit coupling in Ge leads to a negligible interband scattering; the strong bond and light atom mass in diamond give rise to high optical phonons frequency, preventing their participation in scattering. Based on these understandings rooted into the fundamental atomic properties, we present design principles for semiconducting materials towards high hole mobility.
سجل دخول لتتمكن من نشر تعليقات
التعليقات
جاري جلب التعليقات
سجل دخول لتتمكن من متابعة معايير البحث التي قمت باختيارها
